Impurities and doping influence on characteristics of GaAs field effect transistor with Schottky barrier

Impurities and doping influence on characteristics of GaAs field effect transistor with Schottky barrier

In this work ion-implanted MESFET was modeled and its characteristics dependence from substrate was found. Concentrations of deep and shallow centers in substrate were found.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Shestakov, Alexander K., Zhuravlev, Konstantin S., Arykov, Vadim A., Kagadey, Valery A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier processes
Doping
Electron mobility
FETs
Gallium arsenide
Impurities
MESFET
MESFETs
modeling
Schottky barriers
Semiconductor process modeling
Substrates
TCAD
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this work ion-implanted MESFET was modeled and its characteristics dependence from substrate was found. Concentrations of deep and shallow centers in substrate were found.
DOI:10.1109/INTERNANO.2009.5335637