Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs

Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs

Fluctuations in not only the number but also the individual carrier capture rate of interface traps in small gate-area MOSFETs containing only less than several interface traps have been investigated from an understanding of newly observed transient charge pumping characteristics. These fluctuations...

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Hauptverfasser: Tsuchiya, T., Mori, Y., Morimura, Y., Mogami, T., Ohji, Y.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier processes
Charge pumps
Electron traps
Fluctuations
Lead compounds
MIS devices
MOSFETs
Pulse measurements
Telegraphy
Threshold voltage
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Mori, Y.
Morimura, Y.
Mogami, T.
Ohji, Y.
description Fluctuations in not only the number but also the individual carrier capture rate of interface traps in small gate-area MOSFETs containing only less than several interface traps have been investigated from an understanding of newly observed transient charge pumping characteristics. These fluctuations can indicate the possible impact on the fluctuations in threshold voltage of future digital MIS devices.
doi_str_mv 10.1109/ESSDERC.2009.5331364
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5331364</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5331364</ieee_id><sourcerecordid>5331364</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-b5b3078acbeaec144ba7782d4776b194a083219ec08b7652a062967c4af5473f3</originalsourceid><addsrcrecordid>eNo1kE1OwzAQhY0Aibb0BLDwBVLs2IntJWrDj1RUiXZfjZ0JNUqTynEqcQKuTShl9fQ-zXyLR8g9ZzPOmXko1utF8T6fpYyZWSYEF7m8IGMuUymlyIS5JFOj9H_n6RUZcSNYorXKb8i46z4ZG_6kHpHvhQ_oIm1th-EI0bcNbSta1b2L_al21DfUtnFH4w5p0-8tBgpNOeDSH33ZQ00dhOAH7OAQ-4A0QMRfjW8ihgoc0hjgcDJ1e6hr-jEcJBAQ6Ntq_VRsultyXUHd4fScE7IZ8PwlWa6eX-ePy8QbFhObWcGUBmcR0HEpLSil01IqlVtuJDAtUm7QMW1VnqXA8tTkykmoMqlEJSbk7k_rEXF7CH4P4Wt73lD8AGkvZe4</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Tsuchiya, T. ; Mori, Y. ; Morimura, Y. ; Mogami, T. ; Ohji, Y.</creator><creatorcontrib>Tsuchiya, T. ; Mori, Y. ; Morimura, Y. ; Mogami, T. ; Ohji, Y.</creatorcontrib><description>Fluctuations in not only the number but also the individual carrier capture rate of interface traps in small gate-area MOSFETs containing only less than several interface traps have been investigated from an understanding of newly observed transient charge pumping characteristics. These fluctuations can indicate the possible impact on the fluctuations in threshold voltage of future digital MIS devices.</description><identifier>ISSN: 1930-8876</identifier><identifier>ISBN: 9781424443512</identifier><identifier>ISBN: 1424443512</identifier><identifier>EISBN: 1424443539</identifier><identifier>EISBN: 9781424443536</identifier><identifier>DOI: 10.1109/ESSDERC.2009.5331364</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge carrier processes ; Charge pumps ; Electron traps ; Fluctuations ; Lead compounds ; MIS devices ; MOSFETs ; Pulse measurements ; Telegraphy ; Threshold voltage</subject><ispartof>2009 Proceedings of the European Solid State Device Research Conference, 2009, p.387-390</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5331364$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5331364$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Tsuchiya, T.</creatorcontrib><creatorcontrib>Mori, Y.</creatorcontrib><creatorcontrib>Morimura, Y.</creatorcontrib><creatorcontrib>Mogami, T.</creatorcontrib><creatorcontrib>Ohji, Y.</creatorcontrib><title>Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs</title><title>2009 Proceedings of the European Solid State Device Research Conference</title><addtitle>ESSDERC</addtitle><description>Fluctuations in not only the number but also the individual carrier capture rate of interface traps in small gate-area MOSFETs containing only less than several interface traps have been investigated from an understanding of newly observed transient charge pumping characteristics. These fluctuations can indicate the possible impact on the fluctuations in threshold voltage of future digital MIS devices.</description><subject>Charge carrier processes</subject><subject>Charge pumps</subject><subject>Electron traps</subject><subject>Fluctuations</subject><subject>Lead compounds</subject><subject>MIS devices</subject><subject>MOSFETs</subject><subject>Pulse measurements</subject><subject>Telegraphy</subject><subject>Threshold voltage</subject><issn>1930-8876</issn><isbn>9781424443512</isbn><isbn>1424443512</isbn><isbn>1424443539</isbn><isbn>9781424443536</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kE1OwzAQhY0Aibb0BLDwBVLs2IntJWrDj1RUiXZfjZ0JNUqTynEqcQKuTShl9fQ-zXyLR8g9ZzPOmXko1utF8T6fpYyZWSYEF7m8IGMuUymlyIS5JFOj9H_n6RUZcSNYorXKb8i46z4ZG_6kHpHvhQ_oIm1th-EI0bcNbSta1b2L_al21DfUtnFH4w5p0-8tBgpNOeDSH33ZQ00dhOAH7OAQ-4A0QMRfjW8ihgoc0hjgcDJ1e6hr-jEcJBAQ6Ntq_VRsultyXUHd4fScE7IZ8PwlWa6eX-ePy8QbFhObWcGUBmcR0HEpLSil01IqlVtuJDAtUm7QMW1VnqXA8tTkykmoMqlEJSbk7k_rEXF7CH4P4Wt73lD8AGkvZe4</recordid><startdate>200909</startdate><enddate>200909</enddate><creator>Tsuchiya, T.</creator><creator>Mori, Y.</creator><creator>Morimura, Y.</creator><creator>Mogami, T.</creator><creator>Ohji, Y.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200909</creationdate><title>Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs</title><author>Tsuchiya, T. ; Mori, Y. ; Morimura, Y. ; Mogami, T. ; Ohji, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-b5b3078acbeaec144ba7782d4776b194a083219ec08b7652a062967c4af5473f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Charge carrier processes</topic><topic>Charge pumps</topic><topic>Electron traps</topic><topic>Fluctuations</topic><topic>Lead compounds</topic><topic>MIS devices</topic><topic>MOSFETs</topic><topic>Pulse measurements</topic><topic>Telegraphy</topic><topic>Threshold voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Tsuchiya, T.</creatorcontrib><creatorcontrib>Mori, Y.</creatorcontrib><creatorcontrib>Morimura, Y.</creatorcontrib><creatorcontrib>Mogami, T.</creatorcontrib><creatorcontrib>Ohji, Y.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tsuchiya, T.</au><au>Mori, Y.</au><au>Morimura, Y.</au><au>Mogami, T.</au><au>Ohji, Y.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs</atitle><btitle>2009 Proceedings of the European Solid State Device Research Conference</btitle><stitle>ESSDERC</stitle><date>2009-09</date><risdate>2009</risdate><spage>387</spage><epage>390</epage><pages>387-390</pages><issn>1930-8876</issn><isbn>9781424443512</isbn><isbn>1424443512</isbn><eisbn>1424443539</eisbn><eisbn>9781424443536</eisbn><abstract>Fluctuations in not only the number but also the individual carrier capture rate of interface traps in small gate-area MOSFETs containing only less than several interface traps have been investigated from an understanding of newly observed transient charge pumping characteristics. These fluctuations can indicate the possible impact on the fluctuations in threshold voltage of future digital MIS devices.</abstract><pub>IEEE</pub><doi>10.1109/ESSDERC.2009.5331364</doi><tpages>4</tpages></addata></record>
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subjects Charge carrier processes
Charge pumps
Electron traps
Fluctuations
Lead compounds
MIS devices
MOSFETs
Pulse measurements
Telegraphy
Threshold voltage
title Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T14%3A55%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Direct%20observation%20of%20fluctuations%20in%20both%20the%20number%20and%20individual%20carrier%20capture%20rate%20of%20interface%20traps%20in%20small%20gate-area%20MOSFETs&rft.btitle=2009%20Proceedings%20of%20the%20European%20Solid%20State%20Device%20Research%20Conference&rft.au=Tsuchiya,%20T.&rft.date=2009-09&rft.spage=387&rft.epage=390&rft.pages=387-390&rft.issn=1930-8876&rft.isbn=9781424443512&rft.isbn_list=1424443512&rft_id=info:doi/10.1109/ESSDERC.2009.5331364&rft_dat=%3Cieee_6IE%3E5331364%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424443539&rft.eisbn_list=9781424443536&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5331364&rfr_iscdi=true