Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs

Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs

Fluctuations in not only the number but also the individual carrier capture rate of interface traps in small gate-area MOSFETs containing only less than several interface traps have been investigated from an understanding of newly observed transient charge pumping characteristics. These fluctuations...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Tsuchiya, T., Mori, Y., Morimura, Y., Mogami, T., Ohji, Y.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier processes
Charge pumps
Electron traps
Fluctuations
Lead compounds
MIS devices
MOSFETs
Pulse measurements
Telegraphy
Threshold voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Fluctuations in not only the number but also the individual carrier capture rate of interface traps in small gate-area MOSFETs containing only less than several interface traps have been investigated from an understanding of newly observed transient charge pumping characteristics. These fluctuations can indicate the possible impact on the fluctuations in threshold voltage of future digital MIS devices.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2009.5331364