Polarization dependence of a 1.52 mu m InGaAs/InP multiple quantum well waveguide electroabsorption modulator

Polarization dependence of a 1.52 mu m InGaAs/InP multiple quantum well waveguide electroabsorption modulator

A ridge-waveguide In/sub 0.53/Ga/sub 0.47/As/InP multiple-quantum-well (MQW) electroabsorption modulator operating at a wavelength of 1.52 mu m is demonstrated. The modulator exhibits large polarization-dependent electroabsorption behavior which favors the modulation of the TM mode. At a reverse bia...

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Veröffentlicht in:IEEE photonics technology letters 1990-04, Vol.2 (4), p.257-259
Hauptverfasser: Pappert, S.A., Orazi, R.J., Vu, T.T., Lin, S.C., Clawson, A.R., Yu, P.K.L.
Format: Artikel
Sprache:eng
Schlagworte:
Absorption
Extinction ratio
Indium gallium arsenide
Indium phosphide
Optical devices
Optical modulation
Optical polarization
Optical saturation
Quantum well devices
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Zusammenfassung:A ridge-waveguide In/sub 0.53/Ga/sub 0.47/As/InP multiple-quantum-well (MQW) electroabsorption modulator operating at a wavelength of 1.52 mu m is demonstrated. The modulator exhibits large polarization-dependent electroabsorption behavior which favors the modulation of the TM mode. At a reverse bias of 10 V, the modulator has a 24.5-dB extinction ratio for the TM mode, whereas that for the TE mode is only 11.1 dB. Polarization-dependent saturation of absorption has been observed in this device for incident optical power levels of less than 1 mW.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.53254