Germanium MOS transistors on sapphire and alumina platforms

A low temperature process has been established for the manufacture of self-aligned W gate germanium MOS transistors. Hole carrier mobility in the range 500 - 650 cm 2 V -1 s -1 has been achieved. Sub threshold slope, threshold voltage and carrier mobility have been characterised as a function of tem...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Baine, P.T., Gamble, H.S., Armstrong, B.M., Mitchell, S.J.N., McNeill, D.W., Rainey, P.V., Low, Y.H., Low, Y.W., Tantraviwat, D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Germanium Insulation Manufacturing processes MOSFETs Silicon on insulator technology Substrates System-on-a-chip Temperature dependence Thermal stresses Threshold voltage
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