Germanium MOS transistors on sapphire and alumina platforms

Germanium MOS transistors on sapphire and alumina platforms

A low temperature process has been established for the manufacture of self-aligned W gate germanium MOS transistors. Hole carrier mobility in the range 500 - 650 cm 2 V -1 s -1 has been achieved. Sub threshold slope, threshold voltage and carrier mobility have been characterised as a function of tem...

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Hauptverfasser: Baine, P.T., Gamble, H.S., Armstrong, B.M., Mitchell, S.J.N., McNeill, D.W., Rainey, P.V., Low, Y.H., Low, Y.W., Tantraviwat, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Germanium
Insulation
Manufacturing processes
MOSFETs
Silicon on insulator technology
Substrates
System-on-a-chip
Temperature dependence
Thermal stresses
Threshold voltage
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Beschreibung
Zusammenfassung:A low temperature process has been established for the manufacture of self-aligned W gate germanium MOS transistors. Hole carrier mobility in the range 500 - 650 cm 2 V -1 s -1 has been achieved. Sub threshold slope, threshold voltage and carrier mobility have been characterised as a function of temperature. The technology has been successfully transferred to both germanium on sapphire and germanium on alumina substrates providing an ideal platform technology for system on a chip.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2009.5318767