Flip-chip bonded 0.85-μm bottom-emitting vertical-cavity laser array on an AlGaAs substrate

Flip-chip bonded 0.85-μm bottom-emitting vertical-cavity laser array on an AlGaAs substrate

We report high-performance 0.85-μm bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) on an AlGaAs substrate with 2.1 mA threshold current density 4.2 mW maximum output power, 11.7% power conversion efficiency and a maximum operating temperature of 130/spl deg/C. We also demonstrate a...

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Veröffentlicht in:IEEE photonics technology letters 1996-09, Vol.8 (9), p.1115-1117, Article 1115
Hauptverfasser: Ohiso, Y., Tateno, K., Kohama, Y., Wakatsuki, A., Tsunetsugu, H., Kurokawa, T.
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Bonding
Optical arrays
Power conversion
Power generation
Power lasers
Surface emitting lasers
Temperature
Threshold current
Vertical cavity surface emitting lasers
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Zusammenfassung:We report high-performance 0.85-μm bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) on an AlGaAs substrate with 2.1 mA threshold current density 4.2 mW maximum output power, 11.7% power conversion efficiency and a maximum operating temperature of 130/spl deg/C. We also demonstrate a flip-chip bonded 0.85-μm bottom-emitting VCSEL array, and confirm all pixels across the 8×8 VCSEL array operate at a f 3 dB bandwidth of 2.6 GHz at only 4.2 mA.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.531807