SiGe HBT NPN device optimization for RF power amplifier applications

SiGe HBT NPN device optimization for RF power amplifier applications

This paper describes the optimization of Silicon Germanium (SiGe) NPN bipolar transistors for power amplifier performance. Minimizing the collector resistance and barrier effects in a power device are important to optimize the RF characteristics. Overall, we demonstrate that by optimizing the Ge ret...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Joseph, A., McPartlin, M., Lafontaine, H., Forsyth, J., Candra, P., Previti-Kelly, R., Doherty, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bipolar transistors
Design optimization
Germanium silicon alloys
Heterojunction bipolar transistors
Power amplifier
Power amplifiers
Power generation
Radio frequency
Radiofrequency amplifiers
SiGe NPN
Signal design
Silicon germanium
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper describes the optimization of Silicon Germanium (SiGe) NPN bipolar transistors for power amplifier performance. Minimizing the collector resistance and barrier effects in a power device are important to optimize the RF characteristics. Overall, we demonstrate that by optimizing the Ge retrograde design, one can improve the large signal performance to provide 66.5% Power-Added-Efficiency (PAE) at an output power of 15.4 dBm, with 14.1 dB of peak Gain (G p ) and 14.1 dBm P1dB, without degrading BV ceo .
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2009.5314249