New process technologies improve IGBT module efficiency
New process technologies are extending the application range of IGBT modules. A 1400 V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1400 V device has a square turn-off switching SOA making it suitable for 575/608 VAC in...
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| creator | Motto, E.R. Donlon, J.F. Mori, S. Iida, T. |
| description | New process technologies are extending the application range of IGBT modules. A 1400 V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1400 V device has a square turn-off switching SOA making it suitable for 575/608 VAC inverter applications. A very low saturation voltage 250 V IGBT has been developed using a trench gate structure. This new 250 V device offers significant size and efficiency advantages in battery powered applications including fork lift truck and UPS inverters. |
| doi_str_mv | 10.1109/IAS.1995.530409 |
| format | Conference Proceeding |
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A 1400 V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1400 V device has a square turn-off switching SOA making it suitable for 575/608 VAC inverter applications. A very low saturation voltage 250 V IGBT has been developed using a trench gate structure. This new 250 V device offers significant size and efficiency advantages in battery powered applications including fork lift truck and UPS inverters.</description><identifier>ISSN: 0197-2618</identifier><identifier>ISBN: 0780330080</identifier><identifier>ISBN: 9780780330085</identifier><identifier>EISSN: 2576-702X</identifier><identifier>DOI: 10.1109/IAS.1995.530409</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>ADVANCED PROPULSION SYSTEMS ; Batteries ; Bridge circuits ; Charge carrier density ; ELECTRIC CONTROLLERS ; ELECTRIC-POWERED VEHICLES ; ENERGY EFFICIENCY ; Insulated gate bipolar transistors ; INVERTERS ; Packaging ; POWER SUPPLIES ; Semiconductor diodes ; Semiconductor optical amplifiers ; Short circuit currents ; Voltage</subject><ispartof>Conference record of the Industry Applications Conference, 1995, Vol.2, p.991-996 vol.2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/530409$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,885,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/530409$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/415491$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Motto, E.R.</creatorcontrib><creatorcontrib>Donlon, J.F.</creatorcontrib><creatorcontrib>Mori, S.</creatorcontrib><creatorcontrib>Iida, T.</creatorcontrib><title>New process technologies improve IGBT module efficiency</title><title>Conference record of the Industry Applications Conference</title><addtitle>IAS</addtitle><description>New process technologies are extending the application range of IGBT modules. 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This new 250 V device offers significant size and efficiency advantages in battery powered applications including fork lift truck and UPS inverters.</description><subject>ADVANCED PROPULSION SYSTEMS</subject><subject>Batteries</subject><subject>Bridge circuits</subject><subject>Charge carrier density</subject><subject>ELECTRIC CONTROLLERS</subject><subject>ELECTRIC-POWERED VEHICLES</subject><subject>ENERGY EFFICIENCY</subject><subject>Insulated gate bipolar transistors</subject><subject>INVERTERS</subject><subject>Packaging</subject><subject>POWER SUPPLIES</subject><subject>Semiconductor diodes</subject><subject>Semiconductor optical amplifiers</subject><subject>Short circuit currents</subject><subject>Voltage</subject><issn>0197-2618</issn><issn>2576-702X</issn><isbn>0780330080</isbn><isbn>9780780330085</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1995</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkE1LAzEURYMfYK1dC67GjbupeUlmkixr0VoourCCuyFJXzQyM6nNVOm_d2R8mwuXw-XwCLkEOgWg-nY5e5mC1sW04FRQfURGrJBlLil7OybnVCrKOaWKnpARBS1zVoI6I5OUPml_ogDB5YjIJ_zJtrvoMKWsQ_fRxjq-B0xZaPr6G7Pl4m6dNXGzrzFD74ML2LrDBTn1pk44-c8xeX24X88f89XzYjmfrfLAmO5ykF6i9H6jilKDVEZJXyrUTjsEBC8t40xasMYrMBtb2l7aamOFUdZxy8fketiNqQtVcuHP0cW2RddVAgqhoWduBqYX_tpj6qomJId1bVqM-1SxQgNwKXrwagADIlbbXWjM7lAN_-O_B7BhFQ</recordid><startdate>19950101</startdate><enddate>19950101</enddate><creator>Motto, E.R.</creator><creator>Donlon, J.F.</creator><creator>Mori, S.</creator><creator>Iida, T.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers, Inc., Piscataway, NJ (United States)</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19950101</creationdate><title>New process technologies improve IGBT module efficiency</title><author>Motto, E.R. ; Donlon, J.F. ; Mori, S. ; Iida, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i229t-17f7e7ffd8569178a87f68e9c9ce1e1f7b2327b1baf81adb6b330b9ab4a8bc3b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1995</creationdate><topic>ADVANCED PROPULSION SYSTEMS</topic><topic>Batteries</topic><topic>Bridge circuits</topic><topic>Charge carrier density</topic><topic>ELECTRIC CONTROLLERS</topic><topic>ELECTRIC-POWERED VEHICLES</topic><topic>ENERGY EFFICIENCY</topic><topic>Insulated gate bipolar transistors</topic><topic>INVERTERS</topic><topic>Packaging</topic><topic>POWER SUPPLIES</topic><topic>Semiconductor diodes</topic><topic>Semiconductor optical amplifiers</topic><topic>Short circuit currents</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Motto, E.R.</creatorcontrib><creatorcontrib>Donlon, J.F.</creatorcontrib><creatorcontrib>Mori, S.</creatorcontrib><creatorcontrib>Iida, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Motto, E.R.</au><au>Donlon, J.F.</au><au>Mori, S.</au><au>Iida, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>New process technologies improve IGBT module efficiency</atitle><btitle>Conference record of the Industry Applications Conference</btitle><stitle>IAS</stitle><date>1995-01-01</date><risdate>1995</risdate><volume>2</volume><spage>991</spage><epage>996 vol.2</epage><pages>991-996 vol.2</pages><issn>0197-2618</issn><eissn>2576-702X</eissn><isbn>0780330080</isbn><isbn>9780780330085</isbn><abstract>New process technologies are extending the application range of IGBT modules. A 1400 V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1400 V device has a square turn-off switching SOA making it suitable for 575/608 VAC inverter applications. A very low saturation voltage 250 V IGBT has been developed using a trench gate structure. This new 250 V device offers significant size and efficiency advantages in battery powered applications including fork lift truck and UPS inverters.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/IAS.1995.530409</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0197-2618 |
| ispartof | Conference record of the Industry Applications Conference, 1995, Vol.2, p.991-996 vol.2 |
| issn | 0197-2618 2576-702X |
| language | eng |
| recordid | cdi_ieee_primary_530409 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | ADVANCED PROPULSION SYSTEMS Batteries Bridge circuits Charge carrier density ELECTRIC CONTROLLERS ELECTRIC-POWERED VEHICLES ENERGY EFFICIENCY Insulated gate bipolar transistors INVERTERS Packaging POWER SUPPLIES Semiconductor diodes Semiconductor optical amplifiers Short circuit currents Voltage |
| title | New process technologies improve IGBT module efficiency |
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