New process technologies improve IGBT module efficiency

New process technologies are extending the application range of IGBT modules. A 1400 V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1400 V device has a square turn-off switching SOA making it suitable for 575/608 VAC in...

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Bibliographische Detailangaben
Hauptverfasser: Motto, E.R., Donlon, J.F., Mori, S., Iida, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:New process technologies are extending the application range of IGBT modules. A 1400 V IGBT with significantly improved efficiency has been developed using an optimized epitaxial (punch-through) process. This new 1400 V device has a square turn-off switching SOA making it suitable for 575/608 VAC inverter applications. A very low saturation voltage 250 V IGBT has been developed using a trench gate structure. This new 250 V device offers significant size and efficiency advantages in battery powered applications including fork lift truck and UPS inverters.
ISSN:0197-2618
2576-702X
DOI:10.1109/IAS.1995.530409