A fully integrated 2.4/3.4 GHz dual-band CMOS power amplifier with variable inductor

A fully integrated 2.4/3.4 GHz dual-band CMOS power amplifier with variable inductor

A 2.4/3.4 GHz Dual-band CMOS power amplifier using proposed variable inductor is presented. The variable inductor is used for the load of driver amplifier stage. The measured P1dB and PAE of dual band PA is 22.4dBm and 28.8% at 2.4GHz, and 18.8dBm and 14.4% at 3.4GHz, respectively. Also the measured...

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Bibliographische Detailangaben
Hauptverfasser: Yoo, Hyun Jin, Lee, Kang Hyuk, Oh, Hyuk Jun, Eo, Yun Seong
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS process
Costs
Driver circuits
Dual band
Inductors
Power amplifiers
Radio frequency
Semiconductor device measurement
Switches
Tunable circuits and devices
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Zusammenfassung:A 2.4/3.4 GHz Dual-band CMOS power amplifier using proposed variable inductor is presented. The variable inductor is used for the load of driver amplifier stage. The measured P1dB and PAE of dual band PA is 22.4dBm and 28.8% at 2.4GHz, and 18.8dBm and 14.4% at 3.4GHz, respectively. Also the measured output power at which the achieved EVM is −25dB is 15dBm at 2.4GHz and 12.7dBm at 3.4GHz. The chip is fabricated using 0.13um CMOS process and occupies 1.2 mm × 1 mm including pads.
DOI:10.23919/EUMC.2009.5296458