Complex two-level transistor for microwave power amplifiers

Complex two-level transistor for microwave power amplifiers

Original combined double-deck microwave FET has been realized and characterized. Power combining of two 1-Watt transistor crystals has been obtained at frequencies 3 and 6 GHz. These results verify the concept of a design of microwave IC based on two-floor parallel transistor crystal.

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Bibliographische Detailangaben
Hauptverfasser: Iovdalsky, V.A., Pchelin, V.A., Lapin, V.G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Microwave amplifiers
Microwave transistors
Power amplifiers
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Beschreibung
Zusammenfassung:Original combined double-deck microwave FET has been realized and characterized. Power combining of two 1-Watt transistor crystals has been obtained at frequencies 3 and 6 GHz. These results verify the concept of a design of microwave IC based on two-floor parallel transistor crystal.