Simulation of noise factor in gan field transistors using Monte Carlo technique

Simulation of noise factor in gan field transistors using Monte Carlo technique

The definition technique for noise parameters of field transistors is created and the block diagram for definition of noise characteristics by a method of Monte-Carlo is presented. Calculations of noise parameters for structures of AIII-BV type are resulted at various pressures at a gate and a drain...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Muraviyov, V.V., Tamelo, A.A., Mishchenko, V.N., Molodkin, D.F.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gallium nitride
Monte Carlo methods
Noise measurement
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The definition technique for noise parameters of field transistors is created and the block diagram for definition of noise characteristics by a method of Monte-Carlo is presented. Calculations of noise parameters for structures of AIII-BV type are resulted at various pressures at a gate and a drain. During calculation the minimum value of factor of noise for GaN NF ap1.159 dB has been received.