CMOS-integrated poly-SiGe cantilevers with read/write system for probe storage device
A poly-SiGe technology enabling a dense array of micro-cantilevers and tips on CMOS is demonstrated. Built from a dual-thickness structural layer, the cantilevers feature a very small initial bending and have a compliant torsional suspension with a stiffness of 3times10 -10 Nm/rad. Sharp tips are fo...
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| creator | Severi, S. Heck, J. Chou, T.-K.A. Belov, N. Park, J.-S. Harrar, D. Jain, A. Van Hoof, R. Du Bois, B. De Coster, J. Pedreira, O.V. Willegems, M. Vaes, J. Jamieson, G. Haspeslagh, L. Adams, D. Rao, V. Decoutere, S. Witvrouw, A. |
| description | A poly-SiGe technology enabling a dense array of micro-cantilevers and tips on CMOS is demonstrated. Built from a dual-thickness structural layer, the cantilevers feature a very small initial bending and have a compliant torsional suspension with a stiffness of 3times10 -10 Nm/rad. Sharp tips are formed in a low-temperature amorphous silicon layer by isotropic plasma etching. An electrical read/write system is formed by connecting the tip to the CMOS with a suspended platinum trace, running on top of the cantilever. |
| doi_str_mv | 10.1109/SENSOR.2009.5285430 |
| format | Conference Proceeding |
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An electrical read/write system is formed by connecting the tip to the CMOS with a suspended platinum trace, running on top of the cantilever.</description><subject>Circuits</subject><subject>CMOS technology</subject><subject>CMOS-MEMS integration</subject><subject>Etching</subject><subject>Fabrication</subject><subject>Ferroelectric materials</subject><subject>Germanium silicon alloys</subject><subject>high capacity memory</subject><subject>micro cantilever</subject><subject>poly-SiGe</subject><subject>probe storage</subject><subject>Scanning probe microscopy</subject><subject>Scanning Probe Microscopy (SPM)</subject><subject>sharp tip fabrication</subject><subject>Signal to noise ratio</subject><subject>Silicon germanium</subject><subject>Writing</subject><issn>2159-547X</issn><isbn>1424441900</isbn><isbn>9781424441907</isbn><isbn>1424441927</isbn><isbn>1424441935</isbn><isbn>9781424441938</isbn><isbn>9781424441921</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFkFFrwjAUhTM2Yer8Bb7kD1RvbpK2eRzi3MBNWB3sTWJ66zKqlTQo_fdzTNjT4XzwnYfD2FjARAgw02L-VqzeJwhgJhpzrSTcsIFQqJQSBrPb_wJwx_ootEm0yj57bPArGRCZzO7ZqG2_AUCK_EJ0n33MXldF4g-RdsFGKvmxqbuk8Avizh6ir-lEoeVnH794IFtOz8FH4m3XRtrzqgn8GJrtBcQm2B3xkk7e0QPrVbZuaXTNIVs_zdez52S5WrzMHpeJNxAT64yTKtPGojXbNMNcpE5i6SCvcGu0szIVxtiUyhIRQag8R5k6lVrlNGo5ZOO_WU9Em2Pwexu6zfUe-QO4Q1Ux</recordid><startdate>200906</startdate><enddate>200906</enddate><creator>Severi, S.</creator><creator>Heck, J.</creator><creator>Chou, T.-K.A.</creator><creator>Belov, N.</creator><creator>Park, J.-S.</creator><creator>Harrar, D.</creator><creator>Jain, A.</creator><creator>Van Hoof, R.</creator><creator>Du Bois, B.</creator><creator>De Coster, J.</creator><creator>Pedreira, O.V.</creator><creator>Willegems, M.</creator><creator>Vaes, J.</creator><creator>Jamieson, G.</creator><creator>Haspeslagh, L.</creator><creator>Adams, D.</creator><creator>Rao, V.</creator><creator>Decoutere, S.</creator><creator>Witvrouw, A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200906</creationdate><title>CMOS-integrated poly-SiGe cantilevers with read/write system for probe storage device</title><author>Severi, S. ; 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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuits CMOS technology CMOS-MEMS integration Etching Fabrication Ferroelectric materials Germanium silicon alloys high capacity memory micro cantilever poly-SiGe probe storage Scanning probe microscopy Scanning Probe Microscopy (SPM) sharp tip fabrication Signal to noise ratio Silicon germanium Writing |
| title | CMOS-integrated poly-SiGe cantilevers with read/write system for probe storage device |
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