CMOS-integrated poly-SiGe cantilevers with read/write system for probe storage device

A poly-SiGe technology enabling a dense array of micro-cantilevers and tips on CMOS is demonstrated. Built from a dual-thickness structural layer, the cantilevers feature a very small initial bending and have a compliant torsional suspension with a stiffness of 3times10 -10 Nm/rad. Sharp tips are fo...

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Hauptverfasser:	Severi, S., Heck, J., Chou, T.-K.A., Belov, N., Park, J.-S., Harrar, D., Jain, A., Van Hoof, R., Du Bois, B., De Coster, J., Pedreira, O.V., Willegems, M., Vaes, J., Jamieson, G., Haspeslagh, L., Adams, D., Rao, V., Decoutere, S., Witvrouw, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuits CMOS technology CMOS-MEMS integration Etching Fabrication Ferroelectric materials Germanium silicon alloys high capacity memory micro cantilever poly-SiGe probe storage Scanning probe microscopy Scanning Probe Microscopy (SPM) sharp tip fabrication Signal to noise ratio Silicon germanium Writing
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Beschreibung
Zusammenfassung:	A poly-SiGe technology enabling a dense array of micro-cantilevers and tips on CMOS is demonstrated. Built from a dual-thickness structural layer, the cantilevers feature a very small initial bending and have a compliant torsional suspension with a stiffness of 3times10 -10 Nm/rad. Sharp tips are formed in a low-temperature amorphous silicon layer by isotropic plasma etching. An electrical read/write system is formed by connecting the tip to the CMOS with a suspended platinum trace, running on top of the cantilever.
ISSN:	2159-547X
DOI:	10.1109/SENSOR.2009.5285430