Modelling of a symmetrical bipolar monolithic bidirectional switch

The purpose of this paper is to introduce a new concept of symmetrical power bipolar junction transistor for appliances applications with low forward voltage (< 1 V). Design and static simulations are discussed as well as the potential electrical impact of silicon hydrophobic direct wafer bonding...

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Hauptverfasser:	Luong Viet Phung, Ihuel, F., Batut, N., Quoirin, J.-B., Schellmanns, A., Ventura, L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	A.C. Switch Bidirectional switch Current gain Electric potential Energy barrier Germanium silicon alloys Heterojunctions Hydrophobic silicon direct wafer bonding Interfacial defects P-n junctions Packaging Power dissipation Shielding effect Silicon germanium Switches Symmetrical bipolar junction transistor Threshold voltage Wafer bonding
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Beschreibung
Zusammenfassung:	The purpose of this paper is to introduce a new concept of symmetrical power bipolar junction transistor for appliances applications with low forward voltage (< 1 V). Design and static simulations are discussed as well as the potential electrical impact of silicon hydrophobic direct wafer bonding used to realize such a device. Simulations results, for a nominal current of 5 A and a breakdown voltage of 500 V, are compared with existent solutions.