Optical characterization of silicon-on-insulator

Optical characterization of silicon-on-insulator

A study of the optical properties of SOI wafers can provide a quick, nondestructive, and reliable characterization technique. In this paper, we demonstrate a new optical technique which can simultaneously and unambiguously determine thickness, interface roughness (/spl sigma/), refractive index (n),...

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Bibliographische Detailangaben
Hauptverfasser: Li, G.G., Forouhi, A.R., Auberton-Herve, A., Wittkower, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Amorphous materials
Crystalline materials
Equations
Optical films
Quantum mechanics
Reflectivity
Silicon on insulator technology
Substrates
Thickness measurement
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Beschreibung
Zusammenfassung:A study of the optical properties of SOI wafers can provide a quick, nondestructive, and reliable characterization technique. In this paper, we demonstrate a new optical technique which can simultaneously and unambiguously determine thickness, interface roughness (/spl sigma/), refractive index (n), and extinction coefficient (k) of thin films for SOI. The Forouhi-Bloomer dispersion equation for n and k is used to analyze measured reflectance spectra.
DOI:10.1109/SOI.1995.526483