Breakdown mechanism in pulse-charged spark gap based on photoconductive switches

Breakdown mechanism in pulse-charged spark gap based on photoconductive switches

This paper reports the experimental results of pulse-charged spark gap based on GaAs semiconductor photoconductive switches. With variation in the position and structure of spark gap, the electric characteristics of output waveforms are obtained and the breakdown mechanism in pulse-charged spark gap...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ming Xu, Wei Shi, Shenjiang Wu, Weili Ji, Lin Zhang, Suguo Chen
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Dielectric materials
Electric breakdown
GaAs photoconductive switches
Gallium arsenide
Microstrip
Photoconducting devices
Photoconductivity
spark gap
Sparks
Substrates
Switches
ultrafast pulse
Voltage
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Beschreibung
Zusammenfassung:This paper reports the experimental results of pulse-charged spark gap based on GaAs semiconductor photoconductive switches. With variation in the position and structure of spark gap, the electric characteristics of output waveforms are obtained and the breakdown mechanism in pulse-charged spark gap based on photoconductive switches is analyzed. Results imply that high current or ultrafast pulse could be switched by those assembled switches.
ISSN:2160-9225
DOI:10.1109/ICPADM.2009.5252360