Infrared observation of gate turn-off thyristor segment parameter nonuniformity

Infrared observation of gate turn-off thyristor segment parameter nonuniformity

A detection system for measuring the spatial distribution of recombination radiation intensity was used to determine individual gate-turn-off (GTO) thyristor cathode segment parameter nonuniformity. The radiation intensity distribution of the segments is shown to correlate with their steady-state fo...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 1990-04, Vol.37 (4), p.1169-1171
Hauptverfasser: Hatle, M., Vobecky, J.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Cathodes
Electron devices
Electronics
Exact sciences and technology
Infrared detectors
MOSFET circuits
Other multijunction devices. Power transistors. Thyristors
Power measurement
Power MOSFET
Schottky barriers
Schottky diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor optical amplifiers
Thyristors
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A detection system for measuring the spatial distribution of recombination radiation intensity was used to determine individual gate-turn-off (GTO) thyristor cathode segment parameter nonuniformity. The radiation intensity distribution of the segments is shown to correlate with their steady-state forward voltage drops. The method can significantly simplify and speed up the basic diagnosis of a high-power GTO under a state closely approximating actual operating conditions.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.52459