Thermal Stability of Poly-Si Phototransistors Incorporating Ge Quantum Dots for Near-Ultraviolet Light Detection and Amplification

Thermal Stability of Poly-Si Phototransistors Incorporating Ge Quantum Dots for Near-Ultraviolet Light Detection and Amplification

We investigated temperature-dependent ( 300 K - 120 K ) subthreshold characteristics and transient photoresponses of poly-Si phototransistors (PTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide for near-ultraviolet light detection and amplification. Incorporating Ge QDs into the...

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Veröffentlicht in:IEEE photonics technology letters 2009-11, Vol.21 (22), p.1674-1676
Hauptverfasser: Chen, I.H., Tseng, S.S., Pei-Wen Li
Format: Artikel
Sprache:eng
Schlagworte:
Absorption
Amplification
Electrodes
Fabrication
Germanium
Germanium (Ge)
Indium tin oxide
Light absorption
Optical noise
Optical receivers
Oxides
Phototransistors
phototransistors (PTs)
Photovoltaic effect
Quantum dots
quantum dots (QDs)
Thermal stability
Thin film transistors
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Zusammenfassung:We investigated temperature-dependent ( 300 K - 120 K ) subthreshold characteristics and transient photoresponses of poly-Si phototransistors (PTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide for near-ultraviolet light detection and amplification. Incorporating Ge QDs into the poly-Si PT structure improves the device thermal stability in the subthreshold characteristics and transient photoresponse, due to better light absorption efficiency and photovoltaic effect suppression.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2009.2031499