O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures

O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.

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Bibliographische Detailangaben
Hauptverfasser:	Yamamoto, N., Fujioka, H., Akahane, K., Katouf, R., Kawanishi, T., Takai, H., Sotobayashi, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	(060.2330) Fiber optics communications (140.5960) Semiconductor lasers (250.5590) Quantum-well Diode lasers Fiber lasers Gallium arsenide Indium gallium arsenide Molecular beam epitaxial growth Optical fiber communication Particle separators Quantum dot lasers Semiconductor lasers Substrates wire and -dot devices
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Beschreibung
Zusammenfassung:	O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.
ISSN:	2160-9004
DOI:	10.1364/CLEO.2009.JThE12