Two distinct types of dark-line defects in a failed InGaAs/AlGaAs strained quantum well laser diode
TEM characterization of accelerated life-test failed InGaAs/AlGaAs quantum well 980 nm laser diodes, prepared by FIB sampling following EBIC, found two distinct types of dark-line defects providing insight for physics of failure models.
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| creator | Foran, B. Presser, N. Yongkun Sin Mason, M. Moss, S.C. |
| description | TEM characterization of accelerated life-test failed InGaAs/AlGaAs quantum well 980 nm laser diodes, prepared by FIB sampling following EBIC, found two distinct types of dark-line defects providing insight for physics of failure models. |
| doi_str_mv | 10.1364/CLEO.2009.CWF5 |
| format | Conference Proceeding |
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| ispartof | 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, 2009, p.1-2 |
| issn | 2160-9004 |
| language | eng |
| recordid | cdi_ieee_primary_5226031 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | (140.5960) Semiconductor lasers (230.5590) Quantum-well devices Acceleration Diode lasers Indium gallium arsenide Laser modes Laser theory Optical pumping Physics Pump lasers Quantum well lasers Semiconductor lasers |
| title | Two distinct types of dark-line defects in a failed InGaAs/AlGaAs strained quantum well laser diode |
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