Two distinct types of dark-line defects in a failed InGaAs/AlGaAs strained quantum well laser diode

TEM characterization of accelerated life-test failed InGaAs/AlGaAs quantum well 980 nm laser diodes, prepared by FIB sampling following EBIC, found two distinct types of dark-line defects providing insight for physics of failure models.

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Bibliographische Detailangaben
Hauptverfasser:	Foran, B., Presser, N., Yongkun Sin, Mason, M., Moss, S.C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	(140.5960) Semiconductor lasers (230.5590) Quantum-well devices Acceleration Diode lasers Indium gallium arsenide Laser modes Laser theory Optical pumping Physics Pump lasers Quantum well lasers Semiconductor lasers
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Beschreibung
Zusammenfassung:	TEM characterization of accelerated life-test failed InGaAs/AlGaAs quantum well 980 nm laser diodes, prepared by FIB sampling following EBIC, found two distinct types of dark-line defects providing insight for physics of failure models.
ISSN:	2160-9004
DOI:	10.1364/CLEO.2009.CWF5