Direct band gap tensile-strained Germanium

We report up to 2.3% biaxial tensile-strained Ge layers grown on InGaAs/GaAs buffer layers. Low-temperature photoluminescence shows a dramatic intensity increase for >2% tensile strained Ge, confirming the existence of a direct band gap Ge.

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Bibliographische Detailangaben
Hauptverfasser:	Yijie Huo, Hai Lin, Yiwen Rong, Makarova, M., Kamins, T.I., Vuckovic, J., Harris, J.S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	(250.5230) Photoluminescence (250.5590) Quantum-well Germanium Photonic band gap wire and -dot devices
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Beschreibung
Zusammenfassung:	We report up to 2.3% biaxial tensile-strained Ge layers grown on InGaAs/GaAs buffer layers. Low-temperature photoluminescence shows a dramatic intensity increase for >2% tensile strained Ge, confirming the existence of a direct band gap Ge.
ISSN:	2160-9004