Room temperature InGaAs-AlAsSb quantum cascade lasers operating in 3 - 4 µm range

We report the first room temperature strain compensated InGaAs/AlAs(Sb)/InP quantum cascade lasers operating down to 3.15 mum. The lasers with selective incorporation of AlAs barriers in the active regions emit hundreds of milliwatts peak optical power.

Bibliographische Detailangaben

Hauptverfasser:	Revin, D.G., Zhang, S.Y., Commin, J.P., Cockburn, J.W., Kennedy, K., Krysa, A.B., Hopkinson, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	(140.3070) Infrared and far-infrared lasers (140.5965) Semiconductor lasers Capacitive sensors Indium gallium arsenide Indium phosphide Optical design Optical scattering Power lasers quantum cascade Quantum cascade lasers Quantum well lasers Stimulated emission Temperature distribution
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!