Room temperature InGaAs-AlAsSb quantum cascade lasers operating in 3 - 4 µm range

We report the first room temperature strain compensated InGaAs/AlAs(Sb)/InP quantum cascade lasers operating down to 3.15 mum. The lasers with selective incorporation of AlAs barriers in the active regions emit hundreds of milliwatts peak optical power.

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Bibliographische Detailangaben
Hauptverfasser:	Revin, D.G., Zhang, S.Y., Commin, J.P., Cockburn, J.W., Kennedy, K., Krysa, A.B., Hopkinson, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	(140.3070) Infrared and far-infrared lasers (140.5965) Semiconductor lasers Capacitive sensors Indium gallium arsenide Indium phosphide Optical design Optical scattering Power lasers quantum cascade Quantum cascade lasers Quantum well lasers Stimulated emission Temperature distribution
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Beschreibung
Zusammenfassung:	We report the first room temperature strain compensated InGaAs/AlAs(Sb)/InP quantum cascade lasers operating down to 3.15 mum. The lasers with selective incorporation of AlAs barriers in the active regions emit hundreds of milliwatts peak optical power.
ISSN:	2160-9004
DOI:	10.1364/CLEO.2009.CThAA5