Room temperature InGaAs-AlAsSb quantum cascade lasers operating in 3 - 4 µm range
We report the first room temperature strain compensated InGaAs/AlAs(Sb)/InP quantum cascade lasers operating down to 3.15 mum. The lasers with selective incorporation of AlAs barriers in the active regions emit hundreds of milliwatts peak optical power.
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| creator | Revin, D.G. Zhang, S.Y. Commin, J.P. Cockburn, J.W. Kennedy, K. Krysa, A.B. Hopkinson, M. |
| description | We report the first room temperature strain compensated InGaAs/AlAs(Sb)/InP quantum cascade lasers operating down to 3.15 mum. The lasers with selective incorporation of AlAs barriers in the active regions emit hundreds of milliwatts peak optical power. |
| doi_str_mv | 10.1364/CLEO.2009.CThAA5 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5225783</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5225783</ieee_id><sourcerecordid>5225783</sourcerecordid><originalsourceid>FETCH-ieee_primary_52257833</originalsourceid><addsrcrecordid>eNp9istqwkAUQKcFoVKzF7q5P5B0MpObx3IIWguCoO7lqldNyUzsTLLoh_kD_bIW6bpncxbnCDFNZZLqPHutl7NVoqSsknp7MQYfRFQVZYpYoCrzqnwUY5XmMq6kzJ5EFMKH_CVDjQrHYr3uOgs92yt76gfP8O7eyITYtCZs9vA5kOsHCwcKBzoytBTYB-jue-PO0DjQEEMG3zcLntyZJ2J0ojZw9Odn8TKfbetF3DDz7uobS_5rh0phUWr9f_0BeDxBRQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Room temperature InGaAs-AlAsSb quantum cascade lasers operating in 3 - 4 µm range</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Revin, D.G. ; Zhang, S.Y. ; Commin, J.P. ; Cockburn, J.W. ; Kennedy, K. ; Krysa, A.B. ; Hopkinson, M.</creator><creatorcontrib>Revin, D.G. ; Zhang, S.Y. ; Commin, J.P. ; Cockburn, J.W. ; Kennedy, K. ; Krysa, A.B. ; Hopkinson, M.</creatorcontrib><description>We report the first room temperature strain compensated InGaAs/AlAs(Sb)/InP quantum cascade lasers operating down to 3.15 mum. The lasers with selective incorporation of AlAs barriers in the active regions emit hundreds of milliwatts peak optical power.</description><identifier>EISSN: 2160-9004</identifier><identifier>EISBN: 9781557528698</identifier><identifier>EISBN: 1557528691</identifier><identifier>DOI: 10.1364/CLEO.2009.CThAA5</identifier><language>eng</language><publisher>IEEE</publisher><subject>(140.3070) Infrared and far-infrared lasers ; (140.5965) Semiconductor lasers ; Capacitive sensors ; Indium gallium arsenide ; Indium phosphide ; Optical design ; Optical scattering ; Power lasers ; quantum cascade ; Quantum cascade lasers ; Quantum well lasers ; Stimulated emission ; Temperature distribution</subject><ispartof>2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, 2009, p.1-2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5225783$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5225783$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Revin, D.G.</creatorcontrib><creatorcontrib>Zhang, S.Y.</creatorcontrib><creatorcontrib>Commin, J.P.</creatorcontrib><creatorcontrib>Cockburn, J.W.</creatorcontrib><creatorcontrib>Kennedy, K.</creatorcontrib><creatorcontrib>Krysa, A.B.</creatorcontrib><creatorcontrib>Hopkinson, M.</creatorcontrib><title>Room temperature InGaAs-AlAsSb quantum cascade lasers operating in 3 - 4 µm range</title><title>2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference</title><addtitle>CLEO</addtitle><description>We report the first room temperature strain compensated InGaAs/AlAs(Sb)/InP quantum cascade lasers operating down to 3.15 mum. The lasers with selective incorporation of AlAs barriers in the active regions emit hundreds of milliwatts peak optical power.</description><subject>(140.3070) Infrared and far-infrared lasers</subject><subject>(140.5965) Semiconductor lasers</subject><subject>Capacitive sensors</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>Optical design</subject><subject>Optical scattering</subject><subject>Power lasers</subject><subject>quantum cascade</subject><subject>Quantum cascade lasers</subject><subject>Quantum well lasers</subject><subject>Stimulated emission</subject><subject>Temperature distribution</subject><issn>2160-9004</issn><isbn>9781557528698</isbn><isbn>1557528691</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9istqwkAUQKcFoVKzF7q5P5B0MpObx3IIWguCoO7lqldNyUzsTLLoh_kD_bIW6bpncxbnCDFNZZLqPHutl7NVoqSsknp7MQYfRFQVZYpYoCrzqnwUY5XmMq6kzJ5EFMKH_CVDjQrHYr3uOgs92yt76gfP8O7eyITYtCZs9vA5kOsHCwcKBzoytBTYB-jue-PO0DjQEEMG3zcLntyZJ2J0ojZw9Odn8TKfbetF3DDz7uobS_5rh0phUWr9f_0BeDxBRQ</recordid><startdate>200905</startdate><enddate>200905</enddate><creator>Revin, D.G.</creator><creator>Zhang, S.Y.</creator><creator>Commin, J.P.</creator><creator>Cockburn, J.W.</creator><creator>Kennedy, K.</creator><creator>Krysa, A.B.</creator><creator>Hopkinson, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200905</creationdate><title>Room temperature InGaAs-AlAsSb quantum cascade lasers operating in 3 - 4 µm range</title><author>Revin, D.G. ; Zhang, S.Y. ; Commin, J.P. ; Cockburn, J.W. ; Kennedy, K. ; Krysa, A.B. ; Hopkinson, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_52257833</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>(140.3070) Infrared and far-infrared lasers</topic><topic>(140.5965) Semiconductor lasers</topic><topic>Capacitive sensors</topic><topic>Indium gallium arsenide</topic><topic>Indium phosphide</topic><topic>Optical design</topic><topic>Optical scattering</topic><topic>Power lasers</topic><topic>quantum cascade</topic><topic>Quantum cascade lasers</topic><topic>Quantum well lasers</topic><topic>Stimulated emission</topic><topic>Temperature distribution</topic><toplevel>online_resources</toplevel><creatorcontrib>Revin, D.G.</creatorcontrib><creatorcontrib>Zhang, S.Y.</creatorcontrib><creatorcontrib>Commin, J.P.</creatorcontrib><creatorcontrib>Cockburn, J.W.</creatorcontrib><creatorcontrib>Kennedy, K.</creatorcontrib><creatorcontrib>Krysa, A.B.</creatorcontrib><creatorcontrib>Hopkinson, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Revin, D.G.</au><au>Zhang, S.Y.</au><au>Commin, J.P.</au><au>Cockburn, J.W.</au><au>Kennedy, K.</au><au>Krysa, A.B.</au><au>Hopkinson, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Room temperature InGaAs-AlAsSb quantum cascade lasers operating in 3 - 4 µm range</atitle><btitle>2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference</btitle><stitle>CLEO</stitle><date>2009-05</date><risdate>2009</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><eissn>2160-9004</eissn><eisbn>9781557528698</eisbn><eisbn>1557528691</eisbn><abstract>We report the first room temperature strain compensated InGaAs/AlAs(Sb)/InP quantum cascade lasers operating down to 3.15 mum. The lasers with selective incorporation of AlAs barriers in the active regions emit hundreds of milliwatts peak optical power.</abstract><pub>IEEE</pub><doi>10.1364/CLEO.2009.CThAA5</doi></addata></record> |
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| identifier | EISSN: 2160-9004 |
| ispartof | 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, 2009, p.1-2 |
| issn | 2160-9004 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | (140.3070) Infrared and far-infrared lasers (140.5965) Semiconductor lasers Capacitive sensors Indium gallium arsenide Indium phosphide Optical design Optical scattering Power lasers quantum cascade Quantum cascade lasers Quantum well lasers Stimulated emission Temperature distribution |
| title | Room temperature InGaAs-AlAsSb quantum cascade lasers operating in 3 - 4 µm range |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T06%3A55%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Room%20temperature%20InGaAs-AlAsSb%20quantum%20cascade%20lasers%20operating%20in%203%20-%204%20%C2%B5m%20range&rft.btitle=2009%20Conference%20on%20Lasers%20and%20Electro-Optics%20and%202009%20Conference%20on%20Quantum%20electronics%20and%20Laser%20Science%20Conference&rft.au=Revin,%20D.G.&rft.date=2009-05&rft.spage=1&rft.epage=2&rft.pages=1-2&rft.eissn=2160-9004&rft_id=info:doi/10.1364/CLEO.2009.CThAA5&rft_dat=%3Cieee_6IE%3E5225783%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781557528698&rft.eisbn_list=1557528691&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5225783&rfr_iscdi=true |