Influence of RF power density on the nanocrystallization of Ar diluted Si:H thin films deposited by PECVD

Influence of RF power density on the nanocrystallization of Ar diluted Si:H thin films deposited by PECVD

Hydrogenated silicon (Si:H) thin films were deposited at a selected argon diluting ratio under varied RF power density and the influence of it on nanocrystallization was studied by XRD, FTIR and Raman spectroscopy.

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Bibliographische Detailangaben
Hauptverfasser: Zhi Li, Wei Li, Cai Haihong, Gong Yuguang, Qiu Yijiao, Jiang Yadong
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Argon
Crystallization
Grain size
Optical films
Radio frequency
Semiconductor thin films
Silicon
Sputtering
Thin film devices
X-ray scattering
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Beschreibung
Zusammenfassung:Hydrogenated silicon (Si:H) thin films were deposited at a selected argon diluting ratio under varied RF power density and the influence of it on nanocrystallization was studied by XRD, FTIR and Raman spectroscopy.
ISSN:2166-8884
2166-8892
DOI:10.1109/OECC.2009.5213770