GaInP/GaAs monolithic tandem concentrator cells

GaInP/GaAs monolithic tandem concentrator cells

This paper discusses design considerations for the GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140-180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the effici...

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Hauptverfasser: Friedman, D.J., Kurtz, S.R., Bertness, K.A., Kibbler, A.E., Kramer, C., Olson, J.M., King, D.L., Hansen, B.R., Snyder, J.K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Conductivity
Etching
Fabrication
Fingers
Gallium arsenide
Gold
Metallization
Substrates
Sun
Surface resistance
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Beschreibung
Zusammenfassung:This paper discusses design considerations for the GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140-180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. We focus on the issues of grid design, top-cell thickness, and antireflectance coat. We also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices.
DOI:10.1109/WCPEC.1994.520721