Second order Gm-C filters implementation using a new type of transconductor cell based on "multi-sinh" doublet

This paper presents a bipolar implementation of second order G m -C filter using a new type of transconductor cell, based on ldquomulti-sinhrdquo doublets, made up of two second generation current conveyors (CCII). The advantages of the proposed structure are: (a) VLSI implementation of two types of filters - low-pass (LP) and band-pass (BP) - on the same chip; (b) different possibilities of tuning of center frequency, -3 dB bandwidth, and quality factor; (c) a higher dynamic range operation. All these are due to a new type of transconductor cell based on ldquomulti-sinhrdquo doublets. The higher operation range is proved by large signal analysis. The simulations performed in 0.18 mum bipolar technology confirm the theoretical results.