Near infrared inelastic light scattering spectroscopy of high efficiency solar cells device structures based on III-V compounds

The authors report on the experimental and theoretical study of the near infrared inelastic electronic light scattering of the most promising high-efficiency tandem concentrator solar cells device structures based on nand p-type GaAs, InP, InGaAs, and InGaAsP, grown by LPE. They show that the scattering mechanisms associated with charge-, spin-, and momentum-density fluctuations of free electron gas are represented by different line shapes and occurred in corresponding concentration ranges. A new approach to the problem and observed results provide clear evidence that the sensitivity of the developed measurements in solar cell semiconductor structures provide a unique opportunity for their characterization and optimization.