CMOS band-edge schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction
We demonstrate for the first time Schottky barrier height (SBH) tuning using interfacial SiO 2 /high-kappa dipoles resulting in SBH les 0.1 eV from the conduction band-edge (CBE) and SBH les 0.2 eV from the valence band-edge (VBE). The near band-edge electron and hole SBHs have been obtained using a...
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| creator | Coss, Brian E. Loh, Wei-Yip Oh, Jungwoo Smith, Greg Smith, Casey Adhikari, Hemant Sassman, Barry Parthasarathy, Srivatsan Barnett, Joel Majhi, Prashant Wallace, Robert M. Kim, Jiyoung Jammy, Raj |
| description | We demonstrate for the first time Schottky barrier height (SBH) tuning using interfacial SiO 2 /high-kappa dipoles resulting in SBH les 0.1 eV from the conduction band-edge (CBE) and SBH les 0.2 eV from the valence band-edge (VBE). The near band-edge electron and hole SBHs have been obtained using a dielectric-dipole mitigated (DDM) scheme with single metal on Si junction. By optimizing the dielectric thickness, we obtained effective dipole modulation to the SBH of +0.5 and -0.3 eV for AlO x /SiO 2 and LaO x /SiO 2 , respectively, demonstrating reductions in SBH and contact resistance that are necessary for continued enhanced performance in future technology nodes. |
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The near band-edge electron and hole SBHs have been obtained using a dielectric-dipole mitigated (DDM) scheme with single metal on Si junction. By optimizing the dielectric thickness, we obtained effective dipole modulation to the SBH of +0.5 and -0.3 eV for AlO x /SiO 2 and LaO x /SiO 2 , respectively, demonstrating reductions in SBH and contact resistance that are necessary for continued enhanced performance in future technology nodes.</description><identifier>ISSN: 0743-1562</identifier><identifier>ISBN: 9781424433087</identifier><identifier>ISBN: 1424433088</identifier><identifier>EISSN: 2158-9682</identifier><identifier>LCCN: 90-655131</identifier><language>eng</language><publisher>IEEE</publisher><subject>Atherosclerosis ; Contact resistance ; Dielectric substrates ; dipoles ; Distributed decision making ; Electrical resistance measurement ; Electrons ; high-κ ; Schottky barrier height ; Schottky barriers ; Silicides ; Spectroscopy ; Thickness measurement</subject><ispartof>2009 Symposium on VLSI Technology, 2009, p.104-105</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5200650$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5200650$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Coss, Brian E.</creatorcontrib><creatorcontrib>Loh, Wei-Yip</creatorcontrib><creatorcontrib>Oh, Jungwoo</creatorcontrib><creatorcontrib>Smith, Greg</creatorcontrib><creatorcontrib>Smith, Casey</creatorcontrib><creatorcontrib>Adhikari, Hemant</creatorcontrib><creatorcontrib>Sassman, Barry</creatorcontrib><creatorcontrib>Parthasarathy, Srivatsan</creatorcontrib><creatorcontrib>Barnett, Joel</creatorcontrib><creatorcontrib>Majhi, Prashant</creatorcontrib><creatorcontrib>Wallace, Robert M.</creatorcontrib><creatorcontrib>Kim, Jiyoung</creatorcontrib><creatorcontrib>Jammy, Raj</creatorcontrib><title>CMOS band-edge schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction</title><title>2009 Symposium on VLSI Technology</title><addtitle>VLSIT</addtitle><description>We demonstrate for the first time Schottky barrier height (SBH) tuning using interfacial SiO 2 /high-kappa dipoles resulting in SBH les 0.1 eV from the conduction band-edge (CBE) and SBH les 0.2 eV from the valence band-edge (VBE). The near band-edge electron and hole SBHs have been obtained using a dielectric-dipole mitigated (DDM) scheme with single metal on Si junction. By optimizing the dielectric thickness, we obtained effective dipole modulation to the SBH of +0.5 and -0.3 eV for AlO x /SiO 2 and LaO x /SiO 2 , respectively, demonstrating reductions in SBH and contact resistance that are necessary for continued enhanced performance in future technology nodes.</description><subject>Atherosclerosis</subject><subject>Contact resistance</subject><subject>Dielectric substrates</subject><subject>dipoles</subject><subject>Distributed decision making</subject><subject>Electrical resistance measurement</subject><subject>Electrons</subject><subject>high-κ</subject><subject>Schottky barrier height</subject><subject>Schottky barriers</subject><subject>Silicides</subject><subject>Spectroscopy</subject><subject>Thickness measurement</subject><issn>0743-1562</issn><issn>2158-9682</issn><isbn>9781424433087</isbn><isbn>1424433088</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjLtOwzAYRi2gEqH0CVg8wmDVlzhxRtRyk1p1aPfK9v8nNaRJZbsDL8BzUwmkTzpHZ_iuSCGFNqypjLwms6Y2opRlqRQ39Q0peF0qJnQlJ6RoOKu0FkrckruUPjmXXCtTkJ_FerOlzg7AEDqkyR_GnL--LynGgJEeMHSHnOg5haGjELBHn2PwDMJp7JEeQw6dzQj0cblcP9EjZtvPt4G2Y6RpPEePc4g2DNSPQ7Y-04gppGwHjxeFs89hHO7JpLV9wtk_p2T3-rJbvLPV5u1j8bxioeGZVYitEpWpneMCvGkbNJc5aLh2tas1QCOlAd9qFGCEU84p79CCwpIDqCl5-LsNiLg_xXC08XuvJeeV5uoXnYNisg</recordid><startdate>200906</startdate><enddate>200906</enddate><creator>Coss, Brian E.</creator><creator>Loh, Wei-Yip</creator><creator>Oh, Jungwoo</creator><creator>Smith, Greg</creator><creator>Smith, Casey</creator><creator>Adhikari, Hemant</creator><creator>Sassman, Barry</creator><creator>Parthasarathy, Srivatsan</creator><creator>Barnett, Joel</creator><creator>Majhi, Prashant</creator><creator>Wallace, Robert M.</creator><creator>Kim, Jiyoung</creator><creator>Jammy, Raj</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200906</creationdate><title>CMOS band-edge schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction</title><author>Coss, Brian E. ; Loh, Wei-Yip ; Oh, Jungwoo ; Smith, Greg ; Smith, Casey ; Adhikari, Hemant ; Sassman, Barry ; Parthasarathy, Srivatsan ; Barnett, Joel ; Majhi, Prashant ; Wallace, Robert M. ; Kim, Jiyoung ; Jammy, Raj</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-6eef31687bb01dc8f9e89e8bd905b7b75dd9228dcf5e1d81b3bb3cbead3e40dd3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Atherosclerosis</topic><topic>Contact resistance</topic><topic>Dielectric substrates</topic><topic>dipoles</topic><topic>Distributed decision making</topic><topic>Electrical resistance measurement</topic><topic>Electrons</topic><topic>high-κ</topic><topic>Schottky barrier height</topic><topic>Schottky barriers</topic><topic>Silicides</topic><topic>Spectroscopy</topic><topic>Thickness measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Coss, Brian E.</creatorcontrib><creatorcontrib>Loh, Wei-Yip</creatorcontrib><creatorcontrib>Oh, Jungwoo</creatorcontrib><creatorcontrib>Smith, Greg</creatorcontrib><creatorcontrib>Smith, Casey</creatorcontrib><creatorcontrib>Adhikari, Hemant</creatorcontrib><creatorcontrib>Sassman, Barry</creatorcontrib><creatorcontrib>Parthasarathy, Srivatsan</creatorcontrib><creatorcontrib>Barnett, Joel</creatorcontrib><creatorcontrib>Majhi, Prashant</creatorcontrib><creatorcontrib>Wallace, Robert M.</creatorcontrib><creatorcontrib>Kim, Jiyoung</creatorcontrib><creatorcontrib>Jammy, Raj</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Coss, Brian E.</au><au>Loh, Wei-Yip</au><au>Oh, Jungwoo</au><au>Smith, Greg</au><au>Smith, Casey</au><au>Adhikari, Hemant</au><au>Sassman, Barry</au><au>Parthasarathy, Srivatsan</au><au>Barnett, Joel</au><au>Majhi, Prashant</au><au>Wallace, Robert M.</au><au>Kim, Jiyoung</au><au>Jammy, Raj</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>CMOS band-edge schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction</atitle><btitle>2009 Symposium on VLSI Technology</btitle><stitle>VLSIT</stitle><date>2009-06</date><risdate>2009</risdate><spage>104</spage><epage>105</epage><pages>104-105</pages><issn>0743-1562</issn><eissn>2158-9682</eissn><isbn>9781424433087</isbn><isbn>1424433088</isbn><abstract>We demonstrate for the first time Schottky barrier height (SBH) tuning using interfacial SiO 2 /high-kappa dipoles resulting in SBH les 0.1 eV from the conduction band-edge (CBE) and SBH les 0.2 eV from the valence band-edge (VBE). The near band-edge electron and hole SBHs have been obtained using a dielectric-dipole mitigated (DDM) scheme with single metal on Si junction. By optimizing the dielectric thickness, we obtained effective dipole modulation to the SBH of +0.5 and -0.3 eV for AlO x /SiO 2 and LaO x /SiO 2 , respectively, demonstrating reductions in SBH and contact resistance that are necessary for continued enhanced performance in future technology nodes.</abstract><pub>IEEE</pub><tpages>2</tpages></addata></record> |
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| identifier | ISSN: 0743-1562 |
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| issn | 0743-1562 2158-9682 |
| language | eng |
| recordid | cdi_ieee_primary_5200650 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Atherosclerosis Contact resistance Dielectric substrates dipoles Distributed decision making Electrical resistance measurement Electrons high-κ Schottky barrier height Schottky barriers Silicides Spectroscopy Thickness measurement |
| title | CMOS band-edge schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction |
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