CMOS band-edge schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction

We demonstrate for the first time Schottky barrier height (SBH) tuning using interfacial SiO 2 /high-kappa dipoles resulting in SBH les 0.1 eV from the conduction band-edge (CBE) and SBH les 0.2 eV from the valence band-edge (VBE). The near band-edge electron and hole SBHs have been obtained using a dielectric-dipole mitigated (DDM) scheme with single metal on Si junction. By optimizing the dielectric thickness, we obtained effective dipole modulation to the SBH of +0.5 and -0.3 eV for AlO x /SiO 2 and LaO x /SiO 2 , respectively, demonstrating reductions in SBH and contact resistance that are necessary for continued enhanced performance in future technology nodes.