Low-current perpendicular domain wall motion cell for scalable high-speed MRAM

Low-current perpendicular domain wall motion cell for scalable high-speed MRAM

We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this MRAM can replace conventional high-speed embedded m...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Fukami, S., Suzuki, T., Nagahara, K., Ohshima, N., Ozaki, Y., Saito, S., Nebashi, R., Sakimura, N., Honjo, H., Mori, K., Igarashi, C., Miura, S., Ishiwata, N., Sugibayashi, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Magnetic domain walls
Magnetic domains
Random access memory
Thermal stability
Writing
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories.
ISSN:0743-1562