A highly manufacturable 28nm CMOS low power platform technology with fully functional 64Mb SRAM using dual/tripe gate oxide process

A highly manufacturable 28nm CMOS low power platform technology with fully functional 64Mb SRAM using dual/tripe gate oxide process

For the first time, we present good yielding 64Mb SRAM test-chip with the smallest cell using dual/triple gate oxide process flow in 28nm node. The low power technology platform continues scaling trend and extends SiON/poly technology beyond 32nm node with gate density of 2.3× higher than that of 45...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Wu, Shien-Yang, Liaw, J.J., Lin, C.Y., Chiang, M.C., Yang, C.K., Cheng, J.Y., Tsai, M.H., Liu, M.Y., Wu, P.H., Chang, C.H., Hu, L.C., Lin, C.I., Chen, H.F., Chang, S.Y., Wang, S.H., Tong, P.Y., Hsieh, Y.L., Pan, K.H., Hsieh, C.H., Chen, C.H., Yao, C.H., Chen, C.C., Lee, T.L., Chang, C.W., Lin, H.J., Chen, S.C., Shieh, J.H., Jang, S.M., Chen, K.S., Ku, Y., See, Y.C, Lo, W.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
CMOS process
CMOS technology
Manufacturing processes
Message-oriented middleware
Power transistors
Q factor
Radio frequency
Random access memory
Testing
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:For the first time, we present good yielding 64Mb SRAM test-chip with the smallest cell using dual/triple gate oxide process flow in 28nm node. The low power technology platform continues scaling trend and extends SiON/poly technology beyond 32nm node with gate density of 2.3× higher than that of 45nm, and integrates high density (0.127um 2 ) and low Vccmin (0.155um 2 ) 6-T SRAM cells, low power transistors, analog/RF components and Cu-low-k interconnect [1]. Simultaneously available low standby (LSTP) and low operating power (LOP) transistors provide 25-40% speed improvement or 30-50% active power reduction over prior 45nm technology. Competitive mismatch (AVt of 2.86 mV.um) and 1/f noise characteristics, and enhanced MOM unit capacitance of 4.4 fF/um 2 (4 metal layers) with Q factor ≫100 at 2.4GHz are also achieved.
ISSN:0743-1562