Improvement of film stability of a-Si:H deposited by RPCVD using SiH/sub 2/Cl/sub 2

Improvement of film stability of a-Si:H deposited by RPCVD using SiH/sub 2/Cl/sub 2

Hydrogenated amorphous silicon (a-Si:H) were prepared by remote plasma chemical deposition (RPCVD) using SiH/sub 4//SiH/sub 2/Cl/sub 2//He/H/sub 2/ mixtures. The defect density and Urbach energy of a-Si:H(:Cl) were found to be little affected by a small addition of SiH/sub 2/Cl/sub 2/ in SiH/sub 4/....

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Hauptverfasser: Mi Kyung Chu, Jae Seong Byun, Hong Bin Jeon, Kyung Ha Lee, Min Park, Kyu Chang Park, Jin Jang, Hyuk Ryeol Park, Dae Won Kim, Kyung Shik Yoon
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Amorphous silicon
Chemicals
Degradation
Helium
Hydrogen
Lighting
Photoconductivity
Plasma chemistry
Plasma density
Plasma stability
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Zusammenfassung:Hydrogenated amorphous silicon (a-Si:H) were prepared by remote plasma chemical deposition (RPCVD) using SiH/sub 4//SiH/sub 2/Cl/sub 2//He/H/sub 2/ mixtures. The defect density and Urbach energy of a-Si:H(:Cl) were found to be little affected by a small addition of SiH/sub 2/Cl/sub 2/ in SiH/sub 4/. A small addition of H/sub 2/ in SiH/sub 2/Cl/sub 2//SiH/sub 4/ mixture improves the film quality. We deposited a-Si:H(:Cl) films with 6 at.% of hydrogen content and with 3/spl times/10/sup 15/ cm/sup -3/ defect density which exhibited very small photoconductivity degradation during AM-1 illumination.
DOI:10.1109/WCPEC.1994.520019