Preparation of CuInSe/sub 2/ thin films using electrodeposited In/Cu metallic layer

CuInSe/sub 2/ thin films were prepared by a two-stage process: electrodeposition of In/Cu metallic layer and selenization. Effects of current density in In electrodeposition on properties of In/Cu metallic layer and those of CuInSe/sub 2/ thin films were investigated. For lower current densities, In/Cu metallic layer had rough surface with formation of droplets, but smooth surfaces appeared for higher current densities. The compositional nonuniformity became severe for lower current densities, and the amount of loss of indium during the selenization decreased with increasing of current density. It was found that the compositional nonuniformity in the In/Cu metallic layer was caused by formation of droplets and was dependent on the composition nonuniformity in In/Cu metallic layers. Thus, in the case of the highest current density of 80 mA/cm/sup 2/, homogeneous CuInSe/sub 2/ thin films without second phases were prepared. The (112) preferred orientation of CuInSe/sub 2/ thin films was influenced by its composition.