B/P doping in application of silicon oxynitride based integrated optics

B/P doping in application of silicon oxynitride based integrated optics

In this paper, gaseous precursors containing boron or phosphorous were intentionally introduced in the deposition of SiON layers and upper SiO 2 claddings. The measurements show that the as-deposited B/P-doped SiON layers contain less hydrogen than undoped layers. Furthermore, the necessary annealin...

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Bibliographische Detailangaben
Hauptverfasser: Sun, F., Hussein, M.G., Worhoff, K., Sengo, G., Driessen, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Chemical vapor deposition
Doping
Hydrogen
Integrated optics
Optical losses
Optical waveguides
Propagation losses
Silicon
Temperature
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Beschreibung
Zusammenfassung:In this paper, gaseous precursors containing boron or phosphorous were intentionally introduced in the deposition of SiON layers and upper SiO 2 claddings. The measurements show that the as-deposited B/P-doped SiON layers contain less hydrogen than undoped layers. Furthermore, the necessary annealing temperature for elimination of hydrogen related absorption (propagation loss) is greatly reduced in B/P-doped layers.
DOI:10.1109/CLEOE-EQEC.2009.5196496