Limitation of the output power of the quantum-well laser diodes under short-pulsed electrical pumping

In this report, we present experimental study of spectrally-resolved dynamics of InGaAs/GaAs/AlGaAs QW laser diodes emitting through multiple electron and hole quantum levels. 4 mm-long lasers with 7 mum stripes were pumped with short 150 ns electrical pulses with low 16 kHz repetition rate in order...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Sokolovskii, G.S., Deryagin, A.G., Dudelev, V.V., Kuchinskii, V.I., Losev, S.N., Lyutetskiy, A.V., Pikhtin, N.A., Slipchenko, S.O., Sokolova, Z.N., Tarasov, I.S., Vinokurov, D.A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier processes Diode lasers Electron emission Gallium arsenide Indium gallium arsenide Laser excitation Optical pulses Power generation Pump lasers Quantum well lasers
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	In this report, we present experimental study of spectrally-resolved dynamics of InGaAs/GaAs/AlGaAs QW laser diodes emitting through multiple electron and hole quantum levels. 4 mm-long lasers with 7 mum stripes were pumped with short 150 ns electrical pulses with low 16 kHz repetition rate in order to avoid overheating. This has allowed to apply pumping current amplitudes up to 10 A, to the level of hundreds of thresholds.
DOI:	10.1109/CLEOE-EQEC.2009.5192509