$High-Power Single-Mode 1.3- \mum InGaAsP-InGaAsP Multiple-Quantum-Well Laser Diodes With Wide Apertures$

High-Power Single-Mode 1.3- \mum InGaAsP-InGaAsP Multiple-Quantum-Well Laser Diodes With Wide Apertures

A wide-aperture ridge waveguide structure was applied to 1.3-mum InGaAsP-InGaAsP multiple-quantum-well laser diodes (LDs) to increase their maximum kink-free output power under single-lateral-mode operations. As a result, a kink-free output power up to 140 mW and an external efficiency of 0.3 W/A we...

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Veröffentlicht in:	IEEE photonics technology letters 2009-10, Vol.21 (19), p.1438-1440
Hauptverfasser:	Kim, K C, Jang, D.-K., Lee, J I, Kim, T G, Lee, W W, Kim, J H, Yang, E J, Koo, B J, Han, I K
Format:	Artikel
Sprache:	eng
Schlagworte:	Apertures Etching High-power Indium phosphide multiple quantum well (MQW) Optical waveguides Photonic band gap Quantum well devices Refractive index single-mode laser diodes (LDs) Substrates Threshold current Wavelength measurement wide aperture
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