High-Power Single-Mode 1.3- \mum InGaAsP-InGaAsP Multiple-Quantum-Well Laser Diodes With Wide Apertures

High-Power Single-Mode 1.3- \mum InGaAsP-InGaAsP Multiple-Quantum-Well Laser Diodes With Wide Apertures

A wide-aperture ridge waveguide structure was applied to 1.3-mum InGaAsP-InGaAsP multiple-quantum-well laser diodes (LDs) to increase their maximum kink-free output power under single-lateral-mode operations. As a result, a kink-free output power up to 140 mW and an external efficiency of 0.3 W/A we...

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Veröffentlicht in:IEEE photonics technology letters 2009-10, Vol.21 (19), p.1438-1440
Hauptverfasser: Kim, K C, Jang, D.-K., Lee, J I, Kim, T G, Lee, W W, Kim, J H, Yang, E J, Koo, B J, Han, I K
Format: Artikel
Sprache:eng
Schlagworte:
Apertures
Etching
High-power
Indium phosphide
multiple quantum well (MQW)
Optical waveguides
Photonic band gap
Quantum well devices
Refractive index
single-mode laser diodes (LDs)
Substrates
Threshold current
Wavelength measurement
wide aperture
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Beschreibung
Zusammenfassung:A wide-aperture ridge waveguide structure was applied to 1.3-mum InGaAsP-InGaAsP multiple-quantum-well laser diodes (LDs) to increase their maximum kink-free output power under single-lateral-mode operations. As a result, a kink-free output power up to 140 mW and an external efficiency of 0.3 W/A were achieved from a single facet of the LD with a 7-mum-wide ridge top and a 1.5-mm-long uncoated cavity.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2009.2028153