Bipolar magnetotransistor sensitivity dependence on temperature

Bipolar magnetotransistor absolute magnetic sensitivity dependence on temperature in the range 200-370 K and for magnetic fields under 0.18 T was investigated. The possibility of temperature stabilization of sensitivity by input current control was shown.

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Hauptverfasser: Tikhonov, R.D., Kozlov, A.V., Krasukov, A.Yu, Polomoshnov, S.A., Balashov, A.G.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Bipolar magnetotransistor absolute magnetic sensitivity dependence on temperature in the range 200-370 K and for magnetic fields under 0.18 T was investigated. The possibility of temperature stabilization of sensitivity by input current control was shown.
ISSN:1815-3712
DOI:10.1109/EDM.2009.5173955