Investigation of magnetotransistor double-well regions structure and process parameters influence on magnetic sensitivity value

Investigation of magnetotransistor double-well regions structure and process parameters influence on magnetic sensitivity value

The influence of the location of p-well-n-well and n-well-p-substrate junctions and the well formation diffusion parameters on the double-well magnetotransistor magnetic sensitivity value was investigated by means of numerical modeling.

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Bibliographische Detailangaben
Hauptverfasser: Tikhonov, R.D., Kozlov, A.V., Krasukov, A.Yu, Polomoshnov, S.A., Balashov, A.G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Bipolar magnetotransistor
CMOS process
Doping
Electron emission
Energy consumption
Linearity
Magnetic devices
Magnetic field measurement
Magnetic sensors
relative current sensitivity
Voltage
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Beschreibung
Zusammenfassung:The influence of the location of p-well-n-well and n-well-p-substrate junctions and the well formation diffusion parameters on the double-well magnetotransistor magnetic sensitivity value was investigated by means of numerical modeling.
ISSN:1815-3712
DOI:10.1109/EDM.2009.5173954