Monte carlo simulation of thin silicon dioxide layer evaporation

Monte Carlo model of evaporation of thin oxide layer on silicon substrate was suggested. Algorithm of chemical reactions was modified to valid treatment of Si-SiO 2 system. This improvement allows simulation of high-temperature evaporation of thin dioxide layers, and explains available experimental...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Usenkov, S.V., Mzhelskiy, I.V., Shwartz, N.L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Atomic layer deposition Chemical products Dielectric substrates Energy barrier evaporation Lattices Monte Carlo Monte Carlo methods Semiconductor films Seminars Silicon compounds Silicon dioxide simulation
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