Monte carlo simulation of thin silicon dioxide layer evaporation

Monte carlo simulation of thin silicon dioxide layer evaporation

Monte Carlo model of evaporation of thin oxide layer on silicon substrate was suggested. Algorithm of chemical reactions was modified to valid treatment of Si-SiO 2 system. This improvement allows simulation of high-temperature evaporation of thin dioxide layers, and explains available experimental...

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Bibliographische Detailangaben
Hauptverfasser: Usenkov, S.V., Mzhelskiy, I.V., Shwartz, N.L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Atomic layer deposition
Chemical products
Dielectric substrates
Energy barrier
evaporation
Lattices
Monte Carlo
Monte Carlo methods
Semiconductor films
Seminars
Silicon compounds
Silicon dioxide
simulation
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Beschreibung
Zusammenfassung:Monte Carlo model of evaporation of thin oxide layer on silicon substrate was suggested. Algorithm of chemical reactions was modified to valid treatment of Si-SiO 2 system. This improvement allows simulation of high-temperature evaporation of thin dioxide layers, and explains available experimental data.
ISSN:1815-3712
DOI:10.1109/EDM.2009.5173931