Frequency and recovery effects in high-κ BTI degradation

Frequency and recovery effects in high-κ BTI degradation

Net end-of-life aging prediction under realistic use conditions is the key objective for any product aging model. In this paper, a net degradation model is introduced and effects such as recovery, subsequent degradation, frequency, duty cycle, and recovery bias are evaluated. The high-kappa recovery...

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Hauptverfasser: Ramey, S., Prasad, C., Agostinelli, M., Sangwoo Pae, Walstra, S., Gupta, S., Hicks, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aging
Bias-Temperature Instability
CMOS logic circuits
Degradation
Frequency
Hi-κ
Inverters
MOS devices
MOSFETs
Predictive models
Recovery
reliability
Stress measurement
Voltage
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Beschreibung
Zusammenfassung:Net end-of-life aging prediction under realistic use conditions is the key objective for any product aging model. In this paper, a net degradation model is introduced and effects such as recovery, subsequent degradation, frequency, duty cycle, and recovery bias are evaluated. The high-kappa recovery behavior observed is consistent with SiO 2 gate stacks, which allows the use of SiO 2 models to predict recovery in both NMOS and PMOS high-kappa transistors.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2009.5173404