Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2
HfO 2 , HfZr x O y and ZrO 2 gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO 2 , ZrO 2 exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO 2 content increases, V th shift under the nMOS PBTI stress is d...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 972 |
|---|---|
| container_issue | |
| container_start_page | 971 |
| container_title | |
| container_volume | |
| creator | Jung, Hyung-Suk Park, Tae Joo Kim, Jeong Hwan Lee, Sang Young Lee, Joohwi Oh, Him Chan Na, Kwang Duck Park, Jung-Min Kim, Weon-Hong Song, Min-Woo Lee, Nae-In Hwang, Cheol Seong |
| description | HfO 2 , HfZr x O y and ZrO 2 gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO 2 , ZrO 2 exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO 2 content increases, V th shift under the nMOS PBTI stress is dramatically reduced. This is mainly contributed to the lower density of pre-existing bulk traps related to the oxygen vacancies. |
| doi_str_mv | 10.1109/IRPS.2009.5173392 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5173392</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5173392</ieee_id><sourcerecordid>5173392</sourcerecordid><originalsourceid>FETCH-LOGICAL-i241t-6065ef717ff88896402a14326a297ca3c0d40490bb830f2c7b117e29b8c6a3c33</originalsourceid><addsrcrecordid>eNo1kN1KAzEQheNPwVr7AOJNHsCtmSS7SfBKSrWFworVm96UbDbbRrc_JKm4b2_Aei7OwPlgmDkI3QIZARD1MHt7XYwoIWqUg2BM0TN0DZxyTqVU5Bz1QTGZgVRwgYZKyH8m88vEcg6ZILToob6kWcEJA3aFhiF8kiSeMyJFH7WLLkS71dEZHOKx7vB-hyunA07pwXodj95itwtRV651MfEGf2vv9seAN269yb7wWkeLa2dba6J3JuBHPG1Kep986X_KDutdjZe-pDeo1-g22OFpDtDH8-R9PM3m5cts_DTPHOUQs4IUuW0EiKZJz6h0OtXAGS00VcJoZkjNCVekqiQjDTWiAhCWqkqaIlHGBujub6-z1q4O3m2171anEtkvLypeew</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Jung, Hyung-Suk ; Park, Tae Joo ; Kim, Jeong Hwan ; Lee, Sang Young ; Lee, Joohwi ; Oh, Him Chan ; Na, Kwang Duck ; Park, Jung-Min ; Kim, Weon-Hong ; Song, Min-Woo ; Lee, Nae-In ; Hwang, Cheol Seong</creator><creatorcontrib>Jung, Hyung-Suk ; Park, Tae Joo ; Kim, Jeong Hwan ; Lee, Sang Young ; Lee, Joohwi ; Oh, Him Chan ; Na, Kwang Duck ; Park, Jung-Min ; Kim, Weon-Hong ; Song, Min-Woo ; Lee, Nae-In ; Hwang, Cheol Seong</creatorcontrib><description>HfO 2 , HfZr x O y and ZrO 2 gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO 2 , ZrO 2 exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO 2 content increases, V th shift under the nMOS PBTI stress is dramatically reduced. This is mainly contributed to the lower density of pre-existing bulk traps related to the oxygen vacancies.</description><identifier>ISSN: 1541-7026</identifier><identifier>ISBN: 9781424428885</identifier><identifier>ISBN: 1424428882</identifier><identifier>EISSN: 1938-1891</identifier><identifier>EISBN: 1424428890</identifier><identifier>EISBN: 9781424428892</identifier><identifier>DOI: 10.1109/IRPS.2009.5173392</identifier><identifier>LCCN: 82-640313</identifier><language>eng</language><publisher>IEEE</publisher><subject>Crystallization ; Hafnium oxide ; Interface states ; MOS devices ; MOSFET circuits ; Niobium compounds ; Plasma temperature ; Stress ; Titanium compounds ; Zirconium</subject><ispartof>2009 IEEE International Reliability Physics Symposium, 2009, p.971-972</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5173392$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5173392$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jung, Hyung-Suk</creatorcontrib><creatorcontrib>Park, Tae Joo</creatorcontrib><creatorcontrib>Kim, Jeong Hwan</creatorcontrib><creatorcontrib>Lee, Sang Young</creatorcontrib><creatorcontrib>Lee, Joohwi</creatorcontrib><creatorcontrib>Oh, Him Chan</creatorcontrib><creatorcontrib>Na, Kwang Duck</creatorcontrib><creatorcontrib>Park, Jung-Min</creatorcontrib><creatorcontrib>Kim, Weon-Hong</creatorcontrib><creatorcontrib>Song, Min-Woo</creatorcontrib><creatorcontrib>Lee, Nae-In</creatorcontrib><creatorcontrib>Hwang, Cheol Seong</creatorcontrib><title>Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2</title><title>2009 IEEE International Reliability Physics Symposium</title><addtitle>IRPS</addtitle><description>HfO 2 , HfZr x O y and ZrO 2 gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO 2 , ZrO 2 exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO 2 content increases, V th shift under the nMOS PBTI stress is dramatically reduced. This is mainly contributed to the lower density of pre-existing bulk traps related to the oxygen vacancies.</description><subject>Crystallization</subject><subject>Hafnium oxide</subject><subject>Interface states</subject><subject>MOS devices</subject><subject>MOSFET circuits</subject><subject>Niobium compounds</subject><subject>Plasma temperature</subject><subject>Stress</subject><subject>Titanium compounds</subject><subject>Zirconium</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>9781424428885</isbn><isbn>1424428882</isbn><isbn>1424428890</isbn><isbn>9781424428892</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kN1KAzEQheNPwVr7AOJNHsCtmSS7SfBKSrWFworVm96UbDbbRrc_JKm4b2_Aei7OwPlgmDkI3QIZARD1MHt7XYwoIWqUg2BM0TN0DZxyTqVU5Bz1QTGZgVRwgYZKyH8m88vEcg6ZILToob6kWcEJA3aFhiF8kiSeMyJFH7WLLkS71dEZHOKx7vB-hyunA07pwXodj95itwtRV651MfEGf2vv9seAN269yb7wWkeLa2dba6J3JuBHPG1Kep986X_KDutdjZe-pDeo1-g22OFpDtDH8-R9PM3m5cts_DTPHOUQs4IUuW0EiKZJz6h0OtXAGS00VcJoZkjNCVekqiQjDTWiAhCWqkqaIlHGBujub6-z1q4O3m2171anEtkvLypeew</recordid><startdate>200904</startdate><enddate>200904</enddate><creator>Jung, Hyung-Suk</creator><creator>Park, Tae Joo</creator><creator>Kim, Jeong Hwan</creator><creator>Lee, Sang Young</creator><creator>Lee, Joohwi</creator><creator>Oh, Him Chan</creator><creator>Na, Kwang Duck</creator><creator>Park, Jung-Min</creator><creator>Kim, Weon-Hong</creator><creator>Song, Min-Woo</creator><creator>Lee, Nae-In</creator><creator>Hwang, Cheol Seong</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200904</creationdate><title>Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2</title><author>Jung, Hyung-Suk ; Park, Tae Joo ; Kim, Jeong Hwan ; Lee, Sang Young ; Lee, Joohwi ; Oh, Him Chan ; Na, Kwang Duck ; Park, Jung-Min ; Kim, Weon-Hong ; Song, Min-Woo ; Lee, Nae-In ; Hwang, Cheol Seong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i241t-6065ef717ff88896402a14326a297ca3c0d40490bb830f2c7b117e29b8c6a3c33</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Crystallization</topic><topic>Hafnium oxide</topic><topic>Interface states</topic><topic>MOS devices</topic><topic>MOSFET circuits</topic><topic>Niobium compounds</topic><topic>Plasma temperature</topic><topic>Stress</topic><topic>Titanium compounds</topic><topic>Zirconium</topic><toplevel>online_resources</toplevel><creatorcontrib>Jung, Hyung-Suk</creatorcontrib><creatorcontrib>Park, Tae Joo</creatorcontrib><creatorcontrib>Kim, Jeong Hwan</creatorcontrib><creatorcontrib>Lee, Sang Young</creatorcontrib><creatorcontrib>Lee, Joohwi</creatorcontrib><creatorcontrib>Oh, Him Chan</creatorcontrib><creatorcontrib>Na, Kwang Duck</creatorcontrib><creatorcontrib>Park, Jung-Min</creatorcontrib><creatorcontrib>Kim, Weon-Hong</creatorcontrib><creatorcontrib>Song, Min-Woo</creatorcontrib><creatorcontrib>Lee, Nae-In</creatorcontrib><creatorcontrib>Hwang, Cheol Seong</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jung, Hyung-Suk</au><au>Park, Tae Joo</au><au>Kim, Jeong Hwan</au><au>Lee, Sang Young</au><au>Lee, Joohwi</au><au>Oh, Him Chan</au><au>Na, Kwang Duck</au><au>Park, Jung-Min</au><au>Kim, Weon-Hong</au><au>Song, Min-Woo</au><au>Lee, Nae-In</au><au>Hwang, Cheol Seong</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2</atitle><btitle>2009 IEEE International Reliability Physics Symposium</btitle><stitle>IRPS</stitle><date>2009-04</date><risdate>2009</risdate><spage>971</spage><epage>972</epage><pages>971-972</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>9781424428885</isbn><isbn>1424428882</isbn><eisbn>1424428890</eisbn><eisbn>9781424428892</eisbn><abstract>HfO 2 , HfZr x O y and ZrO 2 gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO 2 , ZrO 2 exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO 2 content increases, V th shift under the nMOS PBTI stress is dramatically reduced. This is mainly contributed to the lower density of pre-existing bulk traps related to the oxygen vacancies.</abstract><pub>IEEE</pub><doi>10.1109/IRPS.2009.5173392</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1541-7026 |
| ispartof | 2009 IEEE International Reliability Physics Symposium, 2009, p.971-972 |
| issn | 1541-7026 1938-1891 |
| language | eng |
| recordid | cdi_ieee_primary_5173392 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Crystallization Hafnium oxide Interface states MOS devices MOSFET circuits Niobium compounds Plasma temperature Stress Titanium compounds Zirconium |
| title | Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2 |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T16%3A32%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Systematic%20study%20on%20bias%20temperature%20instability%20of%20various%20high-k%20gate%20dielectrics%20;%20HfO2,%20HfZrxOy%20and%20ZrO2&rft.btitle=2009%20IEEE%20International%20Reliability%20Physics%20Symposium&rft.au=Jung,%20Hyung-Suk&rft.date=2009-04&rft.spage=971&rft.epage=972&rft.pages=971-972&rft.issn=1541-7026&rft.eissn=1938-1891&rft.isbn=9781424428885&rft.isbn_list=1424428882&rft_id=info:doi/10.1109/IRPS.2009.5173392&rft_dat=%3Cieee_6IE%3E5173392%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424428890&rft.eisbn_list=9781424428892&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5173392&rfr_iscdi=true |