Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2

Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2

HfO 2 , HfZr x O y and ZrO 2 gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO 2 , ZrO 2 exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO 2 content increases, V th shift under the nMOS PBTI stress is d...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Jung, Hyung-Suk, Park, Tae Joo, Kim, Jeong Hwan, Lee, Sang Young, Lee, Joohwi, Oh, Him Chan, Na, Kwang Duck, Park, Jung-Min, Kim, Weon-Hong, Song, Min-Woo, Lee, Nae-In, Hwang, Cheol Seong
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Crystallization
Hafnium oxide
Interface states
MOS devices
MOSFET circuits
Niobium compounds
Plasma temperature
Stress
Titanium compounds
Zirconium
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:HfO 2 , HfZr x O y and ZrO 2 gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO 2 , ZrO 2 exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO 2 content increases, V th shift under the nMOS PBTI stress is dramatically reduced. This is mainly contributed to the lower density of pre-existing bulk traps related to the oxygen vacancies.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2009.5173392