Unique electrical characterization and in-line monitoring of nano-tipped defects in metal-insulator-metal capacitors

Unique electrical characterization and in-line monitoring of nano-tipped defects in metal-insulator-metal capacitors

The unique characteristics of defective MIM capacitors under nano-ampere current injection and passive voltage contrast have verified the field enhancement and charge accumulation along nanotipped defects. The improved process which reduces the risk of nanowhiskers is confirmed by in-line optical mo...

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Hauptverfasser: Lieyi Sheng, Snyder, E., Doub, J., Berti, V., Kriner, L., Glines, E.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Dielectrics
Electron emission
Metal-insulator structures
MIM capacitors
Monitoring
Optical saturation
Pattern analysis
Production
Scanning electron microscopy
Tin
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creator Lieyi Sheng
Snyder, E.
Doub, J.
Berti, V.
Kriner, L.
Glines, E.
description The unique characteristics of defective MIM capacitors under nano-ampere current injection and passive voltage contrast have verified the field enhancement and charge accumulation along nanotipped defects. The improved process which reduces the risk of nanowhiskers is confirmed by in-line optical monitoring in production.
doi_str_mv 10.1109/IRPS.2009.5173355
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5173355</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5173355</ieee_id><sourcerecordid>5173355</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-a7a08128230d4cc87363e72b743cbd33c9447e45af6a03d5f7266d8cb8a4becd3</originalsourceid><addsrcrecordid>eNo1UMlOwzAUNEslSukHIC7-ARevsXNEFUulSiCg5-rFfgGj1AmJOcDXE6DMZTSa5TCEnAu-EIKXl6vHh6eF5LxcGGGVMuaAnAottZbOlfyQTEWpHBOuFEdkXlr37zlzPHpGC2a5LCZk6iQrNFdCnZD5MLzxEdoo7uyU5E2K7x9IsUGf--ihof4VevAZ-_gFObaJQgo0JtbEhHTXppjbPqYX2tY0QWpZjl2HgQasx4lhTNIdZmhYTMNHA2OY_WrqoQP_Ux7OyKSGZsD5nmdkc3P9vLxj6_vb1fJqzaKwJjOwwJ2QTioetPfOqkKhlZXVyldBKV9qbVEbqAvgKpjayqIIzlcOdIU-qBm5-NuNiLjt-riD_nO7P1N9Aw01ZIM</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Unique electrical characterization and in-line monitoring of nano-tipped defects in metal-insulator-metal capacitors</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Lieyi Sheng ; Snyder, E. ; Doub, J. ; Berti, V. ; Kriner, L. ; Glines, E.</creator><creatorcontrib>Lieyi Sheng ; Snyder, E. ; Doub, J. ; Berti, V. ; Kriner, L. ; Glines, E.</creatorcontrib><description>The unique characteristics of defective MIM capacitors under nano-ampere current injection and passive voltage contrast have verified the field enhancement and charge accumulation along nanotipped defects. The improved process which reduces the risk of nanowhiskers is confirmed by in-line optical monitoring in production.</description><identifier>ISSN: 1541-7026</identifier><identifier>ISBN: 9781424428885</identifier><identifier>ISBN: 1424428882</identifier><identifier>EISSN: 1938-1891</identifier><identifier>EISBN: 1424428890</identifier><identifier>EISBN: 9781424428892</identifier><identifier>DOI: 10.1109/IRPS.2009.5173355</identifier><identifier>LCCN: 82-640313</identifier><language>eng</language><publisher>IEEE</publisher><subject>Dielectrics ; Electron emission ; Metal-insulator structures ; MIM capacitors ; Monitoring ; Optical saturation ; Pattern analysis ; Production ; Scanning electron microscopy ; Tin</subject><ispartof>2009 IEEE International Reliability Physics Symposium, 2009, p.808-809</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5173355$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,781,785,790,791,2059,27930,54925</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5173355$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lieyi Sheng</creatorcontrib><creatorcontrib>Snyder, E.</creatorcontrib><creatorcontrib>Doub, J.</creatorcontrib><creatorcontrib>Berti, V.</creatorcontrib><creatorcontrib>Kriner, L.</creatorcontrib><creatorcontrib>Glines, E.</creatorcontrib><title>Unique electrical characterization and in-line monitoring of nano-tipped defects in metal-insulator-metal capacitors</title><title>2009 IEEE International Reliability Physics Symposium</title><addtitle>IRPS</addtitle><description>The unique characteristics of defective MIM capacitors under nano-ampere current injection and passive voltage contrast have verified the field enhancement and charge accumulation along nanotipped defects. The improved process which reduces the risk of nanowhiskers is confirmed by in-line optical monitoring in production.</description><subject>Dielectrics</subject><subject>Electron emission</subject><subject>Metal-insulator structures</subject><subject>MIM capacitors</subject><subject>Monitoring</subject><subject>Optical saturation</subject><subject>Pattern analysis</subject><subject>Production</subject><subject>Scanning electron microscopy</subject><subject>Tin</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>9781424428885</isbn><isbn>1424428882</isbn><isbn>1424428890</isbn><isbn>9781424428892</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1UMlOwzAUNEslSukHIC7-ARevsXNEFUulSiCg5-rFfgGj1AmJOcDXE6DMZTSa5TCEnAu-EIKXl6vHh6eF5LxcGGGVMuaAnAottZbOlfyQTEWpHBOuFEdkXlr37zlzPHpGC2a5LCZk6iQrNFdCnZD5MLzxEdoo7uyU5E2K7x9IsUGf--ihof4VevAZ-_gFObaJQgo0JtbEhHTXppjbPqYX2tY0QWpZjl2HgQasx4lhTNIdZmhYTMNHA2OY_WrqoQP_Ux7OyKSGZsD5nmdkc3P9vLxj6_vb1fJqzaKwJjOwwJ2QTioetPfOqkKhlZXVyldBKV9qbVEbqAvgKpjayqIIzlcOdIU-qBm5-NuNiLjt-riD_nO7P1N9Aw01ZIM</recordid><startdate>200904</startdate><enddate>200904</enddate><creator>Lieyi Sheng</creator><creator>Snyder, E.</creator><creator>Doub, J.</creator><creator>Berti, V.</creator><creator>Kriner, L.</creator><creator>Glines, E.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200904</creationdate><title>Unique electrical characterization and in-line monitoring of nano-tipped defects in metal-insulator-metal capacitors</title><author>Lieyi Sheng ; Snyder, E. ; Doub, J. ; Berti, V. ; Kriner, L. ; Glines, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-a7a08128230d4cc87363e72b743cbd33c9447e45af6a03d5f7266d8cb8a4becd3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Dielectrics</topic><topic>Electron emission</topic><topic>Metal-insulator structures</topic><topic>MIM capacitors</topic><topic>Monitoring</topic><topic>Optical saturation</topic><topic>Pattern analysis</topic><topic>Production</topic><topic>Scanning electron microscopy</topic><topic>Tin</topic><toplevel>online_resources</toplevel><creatorcontrib>Lieyi Sheng</creatorcontrib><creatorcontrib>Snyder, E.</creatorcontrib><creatorcontrib>Doub, J.</creatorcontrib><creatorcontrib>Berti, V.</creatorcontrib><creatorcontrib>Kriner, L.</creatorcontrib><creatorcontrib>Glines, E.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lieyi Sheng</au><au>Snyder, E.</au><au>Doub, J.</au><au>Berti, V.</au><au>Kriner, L.</au><au>Glines, E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Unique electrical characterization and in-line monitoring of nano-tipped defects in metal-insulator-metal capacitors</atitle><btitle>2009 IEEE International Reliability Physics Symposium</btitle><stitle>IRPS</stitle><date>2009-04</date><risdate>2009</risdate><spage>808</spage><epage>809</epage><pages>808-809</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>9781424428885</isbn><isbn>1424428882</isbn><eisbn>1424428890</eisbn><eisbn>9781424428892</eisbn><abstract>The unique characteristics of defective MIM capacitors under nano-ampere current injection and passive voltage contrast have verified the field enhancement and charge accumulation along nanotipped defects. The improved process which reduces the risk of nanowhiskers is confirmed by in-line optical monitoring in production.</abstract><pub>IEEE</pub><doi>10.1109/IRPS.2009.5173355</doi><tpages>2</tpages></addata></record>
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Dielectrics
Electron emission
Metal-insulator structures
MIM capacitors
Monitoring
Optical saturation
Pattern analysis
Production
Scanning electron microscopy
Tin
title Unique electrical characterization and in-line monitoring of nano-tipped defects in metal-insulator-metal capacitors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-12T03%3A26%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Unique%20electrical%20characterization%20and%20in-line%20monitoring%20of%20nano-tipped%20defects%20in%20metal-insulator-metal%20capacitors&rft.btitle=2009%20IEEE%20International%20Reliability%20Physics%20Symposium&rft.au=Lieyi%20Sheng&rft.date=2009-04&rft.spage=808&rft.epage=809&rft.pages=808-809&rft.issn=1541-7026&rft.eissn=1938-1891&rft.isbn=9781424428885&rft.isbn_list=1424428882&rft_id=info:doi/10.1109/IRPS.2009.5173355&rft_dat=%3Cieee_6IE%3E5173355%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424428890&rft.eisbn_list=9781424428892&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5173355&rfr_iscdi=true