Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistors

The interface trap's characteristics in silicon dioxide induced by electrostatic discharge current impulse were studied using the transmission line pulsing technique and charge pumping method. It was observed that the electrostatic discharge stress induces far less amount of interface traps prior to breakdown and the interface traps distribution along the channel direction is more non-uniform and localized than DC stress. The possible mechanisms for interface trap generation and formation are suggested.